Abstract： The heavy-hole—heavy-hole scattering in GaAs has been investigated by taking into account the static screening of the excited carrier Gaussian distribution. It has been shown that the scattering rate decreases strongly with the decrease of the initial energy of heavy holes. This can be attributed to the effects of static screening and the overlap of the |p〉 like wave functions of excited carriers. The overlap of the |p〉 like wave functions reduces the scattering rate by a factor of 3 for the low heavy-hole energy. The theoretical predictions are in good agreement with the experimental results.