偏置条件对SOI NMOS器件总剂量辐照效应的影响

卓青青; 刘红侠; 杨兆年; 蔡惠民; 郝跃

doi:10.7498/aps.61.220702

摘要

本文研究了0.8 μm SOI NMOS晶体管, 经剂量率为50 rad(Si)/s 的60Co γ射线辐照之后的总剂量效应, 分析了器件在不同辐照条件和测量偏置下的辐照响应特性. 研究结果表明: 器件辐照时的栅偏置电压越高, 辐照后栅氧化层中积累的空穴陷阱电荷越多, 引起的漏极泄漏电流越大.对于漏偏置为5 V的器件, 当栅电压大于阈值电压时, 前栅ID-VG特性曲线中的漏极电流因碰撞电离而突然增大, 体电极的电流曲线呈现倒立的钟形.

关键词:

Abstract

Based on 0.8 μm process, in the paper we investigate the total dose irradiation effects of SOI NMOS devices under different bias conditions. The devices are exposed to 60Co γ ray at a dose rate of 50 rad (Si)/s. In higher gate bias condition, the drain leakage current increases because more positive charges are trapped in the buried oxide. When the applied gate voltage is larger than the threshold voltage, its drain current of the front gate in ID-VG characteristic suddenly increases and the body current presents a unique upside down bell shape.

Keywords:

作者及机构信息

1.
西安电子科技大学微电子学院, 宽禁带半导体材料与器件教育部重点实验室, 西安 710071

基金项目: 国家自然科学基金(批准号: 61076097, 60936005), 教育部科技创新工程重大项目培育资金(批准号: 708083)和中央高校基本科研业务费专项资金(批准号: 200110203110012)资助的课题.

Authors and contacts

1.
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076097, 60936005), Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China Program (Grant No. 708083), and the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 200110203110012).

参考文献

[1]	Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1833
[2]	Paillet P, Gaillardin M, Ferlet-Cavrois V, Torres A, Faynot O, Jahan C, Tosti L, Cristoloveanu S 2005 IEEE Trans. Nucl. Sci. 52 2345
[3]	Adell P C, Barnaby H J, Schrimpf R D, Vermeire B 2007 IEEE Trans. Nucl. Sci. 54 2174
[4]	Liu Z L Hu Z X Zhang Z X Shao H Ning B X Bi D W Chen M Zou S C 2011 ActaPhys. Sin. 60 116013 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 物理学报 60 116013]
[5]	Fleetwood D M, Shaneyfelt M R, Schwank J R, Winokur P, Sexton F 1989 IEEE Trans. Nucl. Sci. 36 1816
[6]	Jun B, Fleetwood D M, Schrimpf R, Zhou X, Montes E, Cristoloveanu S 2003 IEEE Trans. Nucl. Sci. 5 1891
[7]	Schwank J R, Fleetwood D M, Shaneyfelt M R, Winokur P 1993 IEEE Trans. Nucl. Sci. 40 1666
[8]	Flament O, Torres A, Ferlet-Cavrois V 2003 IEEE Trans. Nucl. Sci. 5 2316
[9]	Ferlet-Cavrois V, Colladant T, Paillet P, Leray J, Musseau O, Schwank J R, Shaneyfelt M R, Pelloie J, Poncharraorst J P 200 IEEE Trans. Nucl. Sci. 47 2183

施引文献

[1]	Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1833
[2]	Paillet P, Gaillardin M, Ferlet-Cavrois V, Torres A, Faynot O, Jahan C, Tosti L, Cristoloveanu S 2005 IEEE Trans. Nucl. Sci. 52 2345
[3]	Adell P C, Barnaby H J, Schrimpf R D, Vermeire B 2007 IEEE Trans. Nucl. Sci. 54 2174
[4]	Liu Z L Hu Z X Zhang Z X Shao H Ning B X Bi D W Chen M Zou S C 2011 ActaPhys. Sin. 60 116013 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 物理学报 60 116013]
[5]	Fleetwood D M, Shaneyfelt M R, Schwank J R, Winokur P, Sexton F 1989 IEEE Trans. Nucl. Sci. 36 1816
[6]	Jun B, Fleetwood D M, Schrimpf R, Zhou X, Montes E, Cristoloveanu S 2003 IEEE Trans. Nucl. Sci. 5 1891
[7]	Schwank J R, Fleetwood D M, Shaneyfelt M R, Winokur P 1993 IEEE Trans. Nucl. Sci. 40 1666
[8]	Flament O, Torres A, Ferlet-Cavrois V 2003 IEEE Trans. Nucl. Sci. 5 2316
[9]	Ferlet-Cavrois V, Colladant T, Paillet P, Leray J, Musseau O, Schwank J R, Shaneyfelt M R, Pelloie J, Poncharraorst J P 200 IEEE Trans. Nucl. Sci. 47 2183

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