2U, Al3U金属化合物; 金属化合物的形成导致界面处Al 2p电子结合能向高能端移动, U 4f电子向低能端移动; 微量O在Al/DU界面处以Al2O3及铀氧化物形式存在; DU镀层中以铀氧化形式存在; 沉积态的Au/DU界面扩散为简单的物理扩散, 团簇效应导致Au/DU界面处Al 2p, U 4f电子结合能均向高能端移动; 在Au/DU界面及DU镀层中, 微量O以铀氧化物形式存在; Al/DU界面扩散强于Au/DU; 相同厚度的Al, Au保护镀层, Al镀层保护效果优于Au镀层."/>         2U and Al3U are formed at Al/DU interface by chemical reaction between Al and DU which induces chemical shift toward high binding energy of Al 2p and toward low binding energy of U 4f. Microdosages of O exist in Al over-layers as Al2O3, in Al/DU interface as Al2O3 and oxidation of uranium, and in DU layers as oxidation of uranium respectively. Just simple physical diffusion takes place at Au/DU interface. Binding energies of Au 4f and U 4f shift toward high-energy tail induced by cluster effect at the Au/DU interface. Microdosages of O exist at Au/DU interface and in DU layers as oxidation of uranium. Diffusion at the Al/DU interface is more obvious than at Au/DU surface. Under the condition of the same thickness valuses Al over-layer is more effective than Au over layer to protect uranium layer from oxidging."/>     磁控溅射沉积铝/贫铀与金/贫铀镀层的界面研究
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物理学报  2013, Vol. 62 Issue (10): 108101     doi:10.7498/aps.62.108101
物理学交叉学科及有关科学技术领域 当期目录| 过刊浏览| 高级检索     
磁控溅射沉积铝/贫铀与金/贫铀镀层的界面研究
易泰民, 邢丕峰, 郑凤成, 梅鲁生, 杨蒙生, 赵利平, 李朝阳, 谢军, 杜凯, 马坤全
中国工程物理研究院激光聚变研究中心, 绵阳 621900
Study on interface of Al/depleted uranium and Au/depleted uranium layers deposited by magnetron sputtering
Yi Tai-Min, Xing Pi-Feng, Zheng Feng-Cheng, Mei Lu-Sheng, Yang Meng-Sheng, Zhao Li-Ping, Li Chao-Yang, Xie Jun, Du Kai, Ma Kun-Quan
Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China

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