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等离子增强原子层沉积低温生长AlN薄膜

冯嘉恒 唐立丹 刘邦武 夏洋 王冰

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等离子增强原子层沉积低温生长AlN薄膜

冯嘉恒, 唐立丹, 刘邦武, 夏洋, 王冰

Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition

Feng Jia-Heng, Tang Li-Dan, Liu Bang-Wu, Xia Yang, Wang Bing
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  • 采用等离子增强原子层沉积技术在单晶硅基体上成功制备了AlN晶态薄膜, 利用椭圆偏振仪、原子力显微镜、小角掠射X射线衍射仪、高分辨透射电子显微镜、 X射线光电子能谱仪对样品的生长速率、表面形貌、晶体结构、薄膜成分进行了表征和分析, 结果表明, 采用等离子增强原子层沉积制备AlN晶态薄膜的最低温度为200 ℃, 薄膜表面平整光滑, 具有六方纤锌矿结构与(100)择优取向, Al2p与N1S的特征峰分别为74.1 eV与397.0 eV, 薄膜中Al元素与N元素以Al-N键相结合, 且成分均匀性良好.
    The crystalline AlN thin film was fabricated on Si(100) substrates by plasma-enhanced atomic layer deposition. Its growth rate was illustrated by spectroscopic ellipsometer. And the surface morphology, crystal structure and composition were characterized by atomic force microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Results show that the lowest temperature for deposition of the crystalline AlN thin film is 200 ℃, and the film coverage on the substrate surface is continuous and homogeneous. The film prepared with a homogeneous concentration distribution is polycrystalline with a hexagonal wurtzite structure. High resolution Al2p and N1s spectra confirm the presence of AlN with peaks located at 74.1 eV and 397.0 eV, respectively.
    • 基金项目: 国家自然科学基金(批准号: 61106060)、 中国科学院知识创新工程重大项目(批准号: Y2YF028001)、 国家高技术研究发展计划(批准号: 2012AA052401)、 国家教育部重点项目(批准号: 212031)和辽宁省教育厅一般项目(批准号: L2011098)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61106060), the Knowledge Innovation Program of the ChineseAcademy of Sciences (Grant No. Y2YF028001), the National High-tech R&D Program of China (Grant No. 2012AA052401), the Research Foundation of Education Bureau of Liaoning Province, China (Grant No. L2011098), and the Foundation for Key Program of Ministry of Education, China (Grant No.212031).
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    Claudel A, Blanquet E, Chaussende D, Boichot R, Doisneau B, Berthome G, Crisci A, Mank H, Moisson C, Pique D, Pons M 2011 Journal of Crystal Growth 335 17

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    Chen Z, Newman S, Brown D, Chung R, Keller S, Mishra U K, Denbaars S P, Nakamura S 2008 Appl. Phys. Lett. 93 191906

    [9]

    Reid K G, Dip A, Sasaki S, Triyoso D, Samavedam S, Gilmer D, Gondran C F H 2009 Thin Solid Films 517 2712

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    Marichy C, Bechelany M, Pinna N 2012 Adv. Mater. 24 1017

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    George S M 2010 Chem. Rev. 110 111

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    Ozgit C, Donmez I, Alevli M, Biyikli N 2012 Thin Solid Films 520 2750

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    Gu J H, ZhouY Q, Zhu M F, Li G H, Ding K, Zhou B Q, Liu F Z, Liu J L, Zhang Q F 2005 Acta Phys. Sin. 54 1890 (in Chinese) [谷锦华, 周玉琴, 朱美芳, 李国华, 丁琨, 周炳卿, 刘丰珍, 刘金龙, 张群芳 2005 物理学报 54 1890]

    [14]

    Tian M B 2006 Thin Film Technologies and Materials (1st Ed.) (Beijing: Tsinghua University Press) p271 (in Chinese ) [田民波 2006 薄膜技术与薄膜材料 (第一版) (北京: 清华大学出版社) 第271页]

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    Dalmau R, Collazo R, Mita R, Sitar Z 2006 Journal of Electronic Materials 36 414

  • [1]

    Schulz M 1999 Nature. Vol. 399 729

    [2]

    Perros A, Bosund M, Sajavaara T, Laitinen M, Sainiemi L, Huhtio T, Lipsanen H 2012 American Vacuum Society. Vol. 30 011504

    [3]

    Jussila H, Mattila P, Oksanen J, Perros A, Riikonen J, Bosund M, Varpula A, Huhtio T, Lipsanen H, Sopanen M 2012 Appl. Phys. Lett. 100 071606

    [4]

    Hwang J, Schaff W J, Green B M, Cha H, Eastman L F 2004 Solid-State Electronics 48 363

    [5]

    Zhou L, Ni X, Ozgur U, Morkoc H, Devaty R P, Choyke W J, Smith David J 2009 Journal of Crystal Growth 311 1456

    [6]

    Zhou C H, Zheng Y D, Deng Y Z, Kong Y C, Chen P, Xi D J, Gu S L, Shen B, Zhang R, Jiang R L, Han P, Shi Y 2004 Acta Phys. Sin. 53 3888 (in Chinese) [周春红, 郑有, 邓咏桢, 孔月婵, 陈鹏, 席冬娟, 顾书林, 沈波, 张荣, 江若琏, 韩平, 施毅 2004 物理学报 53 3888]

    [7]

    Claudel A, Blanquet E, Chaussende D, Boichot R, Doisneau B, Berthome G, Crisci A, Mank H, Moisson C, Pique D, Pons M 2011 Journal of Crystal Growth 335 17

    [8]

    Chen Z, Newman S, Brown D, Chung R, Keller S, Mishra U K, Denbaars S P, Nakamura S 2008 Appl. Phys. Lett. 93 191906

    [9]

    Reid K G, Dip A, Sasaki S, Triyoso D, Samavedam S, Gilmer D, Gondran C F H 2009 Thin Solid Films 517 2712

    [10]

    Marichy C, Bechelany M, Pinna N 2012 Adv. Mater. 24 1017

    [11]

    George S M 2010 Chem. Rev. 110 111

    [12]

    Ozgit C, Donmez I, Alevli M, Biyikli N 2012 Thin Solid Films 520 2750

    [13]

    Gu J H, ZhouY Q, Zhu M F, Li G H, Ding K, Zhou B Q, Liu F Z, Liu J L, Zhang Q F 2005 Acta Phys. Sin. 54 1890 (in Chinese) [谷锦华, 周玉琴, 朱美芳, 李国华, 丁琨, 周炳卿, 刘丰珍, 刘金龙, 张群芳 2005 物理学报 54 1890]

    [14]

    Tian M B 2006 Thin Film Technologies and Materials (1st Ed.) (Beijing: Tsinghua University Press) p271 (in Chinese ) [田民波 2006 薄膜技术与薄膜材料 (第一版) (北京: 清华大学出版社) 第271页]

    [15]

    Dalmau R, Collazo R, Mita R, Sitar Z 2006 Journal of Electronic Materials 36 414

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  • PDF下载量:  2168
  • 被引次数: 0
出版历程
  • 收稿日期:  2012-12-04
  • 修回日期:  2013-01-07
  • 刊出日期:  2013-06-05

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