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氮化硅薄膜中纳米非晶硅颗粒的键合结构及光致发光

于 威 李亚超 丁文革 张江勇 杨彦斌 傅广生

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氮化硅薄膜中纳米非晶硅颗粒的键合结构及光致发光

于 威, 李亚超, 丁文革, 张江勇, 杨彦斌, 傅广生

Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films

Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng
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  • 采用螺旋波等离子体化学气相沉积技术以N2/SiH4/H2为反应气体制备了镶嵌有纳米非晶硅颗粒的氢化氮化硅薄膜,通过改变N2流量实现了薄膜从红到蓝绿的可调谐光致发光.傅里叶红外透射和紫外-可见光吸收特性分析表明,所生长薄膜具有较高的氢含量,N2流量增加使氢的键合结构发生变化,非晶硅颗粒尺寸减小,所对应的薄膜的光学带隙逐渐增加和微观结构有序度减小.可调光致发光(PL)主要来源于纳米硅颗粒的量子限制效应发光,随N2流量增加,PL的谱线展宽并逐渐增强.
    The Si-in-SiNx:H films were prepared by helicon wave plasma chemical vapor deposition technique with active gas N2/SiH4/H2, and the tuning photoluminescence of the films from red to blue-green is achieved by changing the N2 flow rate. The analysis of Fourier transform infrared spectroscopy and ultraviolet-visible absorption demonstrate that the deposited films have higher hydrogen contents. Increasing of N2 flow rate makes the hydrogen bonding configurations change and the size of amorphous silicon particles decrease, to which corresponds the increase of band gap and also the decrease of the microstructure order. The tuning photoluminescence is mainly related to the quantum confinement of amorphous silicon particles. The broadening of the spectral widths of main photoluminescence and the enhancement of their intensities are obtained for the films deposited with increasing N2 flow rates.
    • 基金项目: 河北省自然科学基金(批准号:2006000999, 2007000201和2004000119)资助的课题.
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  • 文章访问数:  7627
  • PDF下载量:  1105
  • 被引次数: 0
出版历程
  • 收稿日期:  2007-09-04
  • 修回日期:  2007-10-24
  • 刊出日期:  2008-03-05

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