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| 应变Si1－xGex/(111)Si空穴有效质量模型 |
| 宋建军, 张鹤鸣, 胡辉勇, 宣荣喜, 戴显英 |
| 西安电子科技大学微电子学院，宽禁带半导体材料与器件重点实验室，西安 710071 |
| Model of hole effective mass of strained Si1－xGex/(111)Si |
| Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying |
| 西安电子科技大学微电子学院，宽禁带半导体材料与器件重点实验室，西安 710071 |
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摘要： 利用应变Si1-xGex/(111)Si材料价带E(k)-k关系，研究获得了沿不同晶向的空穴有效质量，并在此基础上，建立了空穴各向同性有效质量模型.结果表明，与弛豫材料相比，应变Si1-xGex/(111)Si材料价带带边空穴有效质量各向异性更加显著，带边空穴各向同性有效质量随Ge组分明显减小.该研究成果可为Si基应变PM
关键词：
应变Si1-xGex
空穴有效质量
价带
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Abstract： There has been much interest in the Si-based strained technology lately. The research on the hole effective mass of Si-based strained material is the theoretical basis for the performance enhancement of Si-based strained PMOS devices. Based on the valence band E(k)-k relation of strained Si1-xGex/(111)Si, the hole effective mass along arbitrarily k wavevector direction were obtained. And the hole isotropic effective mass models were established. It was found that in comparison with relaxed Si, the more obvious anisotropy of the hole effective mass occurs in strained Si1-xGex/(111)Si and the hole isotropic effective mass of the top valence band decreases obviously with increasing Ge fraction. The results can supply valuable references to the conduction channel design related to stress and orientation in the Si-based strained PMOS devices.
Keywords：
strained Si1-xGex
hole effective mass
valence band
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收稿日期: 2009-04-23
出版日期: 2010-01-15
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| 基金: 国家部委项目(批准号：51308040203,9140A08060407DZ0103, 6139801)资助的课题. |
| 引用本文: |
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宋建军,张鹤鸣,胡辉勇 等 . 应变Si1－xGex/(111)Si空穴有效质量模型. 物理学报, 2010, 59(1): 582.
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| Cite this article: |
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Song Jian-Jun,Zhang He-Ming,Hu Hui-Yong et al. Model of hole effective mass of strained Si1－xGex/(111)Si. Acta Phys. Sin., 2010, 59(1): 579-582.
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| URL: |
| http://wulixb.iphy.ac.cn/CN/Y2010/V59/I1/579 |
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2010, Vol. 59 
