ω扫描半高全宽200—30"/>         ω-scan curves of AlN are 900—1500 arcsec. The reason for dislocation reduction in GaN shown by TEM image is that a part of dislocations in AlN are eliminated in the interface between AlN and GaN. This is probably due to the lattice restoration from Ga atoms for their large size. On the other hand, when surface roughness of AlN is large, the surface migration of Ga atoms is nestricted during the MOVPE growth, which results in a poor GaN quality. Moreover, the resistivity of GaN confirmed with Van der Pauw method is between 105 and 106 Ω ·cm, which is about six orders of magnitude higher than that in GaN grown on sapphire substrates. This is attributed to the replacement of low temperature GaN buffer layer by the AlN."/>     AlN/蓝宝石模板上生长的GaN研究
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物理学报  2010, Vol. 59 Issue (11): 8021-8025
凝聚物质:结构、热学和力学性质 当期目录| 下期目录| 过刊浏览| 高级检索     
AlN/蓝宝石模板上生长的GaN研究
汪莱, 王磊, 任凡, 赵维, 王嘉星, 胡健楠, 张辰, 郝智彪, 罗毅
清华大学电子工程系,集成光电子学国家重点实验室,清华信息科学与技术国家实验室(筹),北京 100084
GaN grown on AlN/sapphire templates
Wang Lai, Wang Lei, Ren Fan, Zhao Wei, Wang Jia-Xing, Hu Jian-Nan, Zhang Chen, Hao Zhi-Biao, Luo Yi
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

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