基于SOI技术的单层多晶EEPROM和SONOS EEPROM抗总剂量辐照特性研究

肖志强; 李蕾蕾; 张波; 徐静; 陈正才

doi:10.7498/aps.60.028502

摘要

在自行研发的0.8 μm SOI工艺平台上开发了基于SOI技术的单层多晶硅EEPROM(electrically erasable programmable read only memory)和SONOS (silicon-oxide-nitride-oxide-silicon)EEPROM,并进行了抗总剂量辐照实验研究,分析了各种EEPROM结构在抗总剂量辐照下的失效机理.结果表明基于SOI 技术的SONOS EEPROM具有良好的抗总剂量辐照性能,为抗辐照EEPROM电路中的存储单元结构选取提供了依据.

关键词:

EEPROM /
SOI SONOS /
辐照 /
浮栅

Abstract

Devices of single poly electrically ersable programmable read only memory (EEPROM) and silicon-oxide-nitride-oxide-silicon (SONOS) EEPROM on silicon on insulator (SOI) are fabricated on self-built 0.8 μm SOI process. And through a set of experiments on EEPROMs of these configurations and comparisons, SOI SONOS EEPROM is successfully developed with good and stable total dose radiation hardened characteristics. These provide stronger proofs to choose EEPROM in radiation hardened circuits.

Keywords:

electrically ersable programmable read only memory /
silicon on insulator silicon-oxide-nitride-oxide-silicon /
radiation /
floating gate

作者及机构信息

(1)电子科技大学电子薄膜与集成器件国家重点实验室,成都 610054; (2)电子科技大学电子薄膜与集成器件国家重点实验室,成都 610054;中国电子科技集团公司第五十八研究所,无锡 214035; (3)中国电子科技集团公司第五十八研究所,无锡 214035; (4)中国电子科技集团公司第五十八研究所,无锡 214035;西安电子科技大学微电子学院,西安 710071

基金项目: 国家科技重大专项(批准号:2009ZX02306-04)资助的课题.

Authors and contacts

(1)State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; (2)State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China; (3)The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China; (4)The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China;School of Microelectronics, Xidian University, Xi’an 710071, China

参考文献

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[13]	He C H, Geng B, Yang H L, Chen X H, Li G Z, Wang Y P 2003 Acta Phys. Sin. 52 2235 (in Chinese)[贺朝会、耿斌、杨海亮、陈晓华、李国政、王燕萍 2003 物理学报 52 2235]
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[15]	Wu A M, Chen J, Zhang E X, Yang H, Zhang Z X, Wang X 2007 Functional Materials Information 38 866 (in Chinese) [武爱民、陈静、张恩霞、杨慧、张正选、王曦 2007 功能材料信息38 866]
[16]	Cai J R 2004 Electronisc and Packing 4 20 (in Chinese)[蔡菊容 2004 电子与封装 4 20]
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施引文献

[1]	Kuesters K H, Ludwig C, Mikolajick T, Nagel N, Specht M, Pissors V, Schulze N, Stein N, Willer J 2006 ICSICT'06. 8th International Conference on Solid-State and Integrated Circuit Technology Shanghai, Oct. 23—26 p740
[2]	Fang S H, Cheng X L, 2007 Chinese Journal of Electron Devices 30 1211 (in Chinese)[房少华、程秀兰 2007 电子器件 30 1211]
[3]	White M H, Adams D A, Bu J 2000 IEEE Circuit. Devic. 16 22
[4]	Takeuchi H, King T J 2003 IEEE Electr. Device Lett. 24 309
[5]	Wellekens D, Groeseneken G, Houdt J V, Maes H E 1993 IEEE Trans. Nuc. Sci. 40 1619
[6]	Cellere G, Pellati P, Chimerton A, Modelli A, Larcher L, PACSagrella A 2001 IEEE Trans. Nuc. Sci. 48 2222
[7]	Fang S H, Cheng X L, Huang Y, Gu H H 2007 Acta Phys. Sin. 56 6634(in Chinese)[房少华、程秀兰、黄晔、顾怀怀 2007 物理学报 56 6634]
[8]	Guo H X, Chen Y S, Zhang Y M, Han F B, He C H, Zhou H 2002 Acta Phys. Sin. 51 2315(in Chinese)[郭红霞、陈雨生、张义门、韩福斌、贺朝会、周辉 2002 物理学报 51 2315]
[9]	He B P, Guo H X, Gong J C, Wang G Z, Luo Y H, Li Y H 2004 Acta Phys. Sin. 53 3125 (in Chinese)[何宝平、郭红霞、龚建成、王桂珍、罗尹虹、李永宏 2004 物理学报 53 3125]
[10]	Li L L, Liu H X, Yu Z G, Hao Y 2006 Acta Phys. Sin. 55 2459 (in Chinese)[李蕾蕾、刘红侠、于宗光、郝跃 2006 物理学报 55 2459]
[11]	Yu Z G, Lu F, Xu Z, Ye S Y, Huang W, Wang W Y, Xu J Y, 2000 Acta Electr. Sin. 28 90 (in Chinese) [于宗光、陆锋、徐征、叶守银、黄卫、王万业、许居衍 2000 电子学报 28 90]
[12]	He C H, Geng B, Yang H L, Chen X H, Wang Y P, Li G Z 2003 Acta Phys. Sin. 52 180 (in Chinese)[贺朝会、耿斌、杨海亮、陈晓华、王燕萍、李国政 2003 物理学报 52 180]
[13]	He C H, Geng B, Yang H L, Chen X H, Li G Z, Wang Y P 2003 Acta Phys. Sin. 52 2235 (in Chinese)[贺朝会、耿斌、杨海亮、陈晓华、李国政、王燕萍 2003 物理学报 52 2235]
[14]	Du P Y, Lue H T, Wang S Y, Huang T Y, Hsieh K Y, Liu R, Lu C Y 2008 IEEE Tran.Elect. Dev. 55 2230
[15]	Wu A M, Chen J, Zhang E X, Yang H, Zhang Z X, Wang X 2007 Functional Materials Information 38 866 (in Chinese) [武爱民、陈静、张恩霞、杨慧、张正选、王曦 2007 功能材料信息38 866]
[16]	Cai J R 2004 Electronisc and Packing 4 20 (in Chinese)[蔡菊容 2004 电子与封装 4 20]
[17]	White M H, Adams D A, Murray J R, Wrazien S, Zhao E, Wang Y, Khan B, Miller W, Mehrotra R 2004 Non-Volatile Memory Technology Symposium Orlando, USA, November 15—17 , 2004 p51
[18]	Wallinger T 2007 Semiconductor International 30 49

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