离子束溅射Ge量子点的应变调制生长
物理学报
引用检索 快速检索
物理学报  2012, Vol. 61 Issue (1): 016804
凝聚物质:结构、力学和热学性质 当期目录| 下期目录| 过刊浏览| 高级检索 [an error occurred while processing this directive]  [an error occurred while processing this directive] 
离子束溅射Ge量子点的应变调制生长
陶东平1, 王茺2, 靳映霞2, 李亮2, 杨宇2, 杨杰3
(1)昆明理工大学冶金与能源工程学院, 昆明 650093; (2)云南大学工程技术研究院光电信息材料研究所, 昆明 650091; (3)云南大学工程技术研究院光电信息材料研究所, 昆明 650091;昆明理工大学冶金与能源工程学院, 昆明 650093
Underlying strain-induced growth of the self-assembled Ge quantum-dots prepared by ion beam sputtering deposition
Tao Dong-ping1, Wang Chong2, Jin Ying-Xia2, Li Liang2, Yang Yu2, Yang Jie3
(1)Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China; (2)Institute of Optoelectronic Information Materials, Academy of Engineering and Technology, Yunnan University, Kunming 650091, China; (3)Institute of Optoelectronic Information Materials, Academy of Engineering and Technology, Yunnan University, Kunming 650091, China;Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China

版权所有 ©  物理学报
地址:北京市603信箱,《物理学报》编辑部 邮编:100190
电话:010-82649294,82649829,82649863   E-mail:apsoffice@iphy.ac.cn
网络系统维护电话:010-62662699-1; 技术支持邮箱 linjl@magtech.com.cn