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中子辐照含氢硅中的一种新EPR谱

林绪伦

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中子辐照含氢硅中的一种新EPR谱

林绪伦

A NEW EPR SPECTRUM IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN

LIN XU-LUN
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  • 氢气氛下生长的区熔硅(磷~1014/cm3)经镉比为10,总通量为(2.9—6.0)×1017n/cm2的中子辐照后,在77K,X波段观测到一种S=1/2的新EPR谱(标号为PK2)。geff值随(011)平面内磁场的角度关系呈三斜对称性。对应于缺陷在硅中一特定取向下的g张量主值及主轴相对于立方晶轴的方向余弦如下:g(±0.0004) n[100] n[010] n[001] g1
    The n-type FZ silicon (P~1014/cm3) grown in hydrogen is irradiated with neutrons of the total flux of (2.9-6.0)×1017n/cm2 and with Cd ratio about 10 at room temperature. An S=1/2 EPR spectrum, labeled Si-PK2, is found in X band and at 77K. The angular dependence of the geff values with H in the (011) plane has a tricliuic symmetry. For one of the equivalent defect orientations the principle values of the g tensor and the direction cosines of the principle axes with respect to the cubic axes are as follows: g(±0.0004) n[100] n[010] n[001] g1=2.0028 -0.5154 0.8473 -0.1283 g2=2.0063 -0.7386 -0.5151 -0.4347 g3=1.9971 -0.4344 -0.1293 0.8914 The simulated EPR spectra computed from the g tensor are consistent with the experimental results.The PK2 EPR spectrumappears in the unannealed neutron irradiated samples and remains until 300℃ annealing. It is probebly due to a kind of defects which is depen-tent of the hydrogen.
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出版历程
  • 收稿日期:  1985-07-18
  • 刊出日期:  1986-03-05

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