m, the introduction rate of defect began to decrease. The Tm value was related to the annealing activation energy of defect. It was also found that the density of E3 (Ec-0.36 eV) defects greatly increased in hightemperature electron irradiation. When electron irradiation was carried out at 330℃, the density of E3 defects was about 6 times as large as that at room temperature. The possible structure of the E3 defect is multivacancy-oxygen complex."/>     高温电子辐照硅中缺陷的研究
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物理学报  1987, Vol. 36 Issue (6): 745-751
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高温电子辐照硅中缺陷的研究
陆昉1, 孙恒慧1, 黄蕴1, 盛篪1, 张增光2, 王梁2
(1)复旦大学物理系; (2)上海整流器总厂
STUDY OF THE DEFECTS IN SILICON PRODUCED BY HIGH TEMPERATURE ELECTRON IRRADIATION
LU FANG1, SUN HENG-HUI1, HUANG YUN1, SHENG CHI1, ZHANG ZENG-GUANG2, WANG LIANG2
(1)复旦大学物理系; (2)上海整流器总厂

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