Several surface properties of implanted GaAs after Nd:YAG and ruby laser annealing have been investigated by the techniques of RBS combined with channeling, Auger and X-ray photoelectron spectroscopy. The results indicate that recovery of the implanted amorphous layer exhibits a threshold and no appreciable surface decomposition occurs in narrow energy density window just above the threshold. High energy densities cause significant surface decomposition and damage. We calculate the redistribution by heat flow theory. High ratio of Te substitution in GaAs is obtained.