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单轴应变Si导带色散关系解析模型

王冠宇 宋建军 张鹤鸣 胡辉勇 马建立 王晓艳

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单轴应变Si导带色散关系解析模型

王冠宇, 宋建军, 张鹤鸣, 胡辉勇, 马建立, 王晓艳

Analytical dispersion relation model for conduction band of uniaxial strained Si

Wang Guan-Yu, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Ma Jian-Li, Wang Xiao-Yan
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  • 本文基于kp 理论框架, 分析了单轴应力对导带能带结构的影响, 详细讨论了剪切应力作用下布里渊区边界X点处1和2 能带之间的耦合作用及其对导带能谷极小值的改变, 由此进一步给出了能谷极值点附近的色散关系. 最后通过不同能谷之间的坐标变换, 得到了任意单轴应力作用下每个能谷的色散关系. 本文的研究可以为单轴应变Si材料物理性质的理解以及对反型层能带结构、电学特性的相关研究提供一定的理论参考.
    In this paper, based on the framework of kp method, the influence of uniaxial stress on the conduction band energy-band structure of bulk-Si is analysed first, the coupling of 1 and 2 bands at the X point, and the influence of that band-band coupling on the minimum of energy valley are then separately discussed under the action of shear strain. On that basis, the dispersion relation close to the minimum is obtained. Furthermore, the different valley orientations need to be taken into account. Using the coordinate transformation, the modelling for dispersion relation of each valley with arbitrary uniaxial stress is finally achieved. The proposed analytical model in this paper is also suited to the understanding of the physical properties of uniaxial strained Si material and may provide some references for the study on bandstructure and electrical properties of the inversion layer in uniaxial strained Si nMOSFETs.
    • 基金项目: 国家部委项目(批准号: 51308040203, 6139801), 中央高校基本科研业务费(批准号: 72105499, 72104089), 陕西省自然科学基础研究计划项目(批准号: 2010JQ8008)资助的课题.
    • Funds: Project supported by the National Ministries and Commissions (Grant Nos. 51308040203, 6139801), the Fundamental Research Funds for the Central Universities (Grant Nos. 72105499, 72104089), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).
    [1]

    Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 物理学报 58 4948]

    [2]

    Thompson S E, Sun G Y, Choi Y S 2006 IEEE Trans.Electron Devices 53 1010

    [3]

    Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827

    [4]

    Ma J L, Zhang H M, Song J J, Wang G Y, Wang X Y 2011 Acta Phys.Sin. 60 017101 (in Chinese) [马建立, 张鹤鸣, 宋建军, 王冠宇, 王晓艳 2011 物理学报 60 017101]

    [5]

    Rahman M M 2008 International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) p142

    [6]

    Viktor S, Siegfried S 2008 Solid-State Electronics 52 1861

    [7]

    Soline R, Nicolas C 2003 Journal of Applied Physics 94 5088

    [8]

    Dhar S, Ungersbök E, Kosina S, Grasser T, Selberherr S 2007 IEEE Trans.Nano. 6 97

    [9]

    Hensel J C, Hasegawa H, Nakayama M 1965 Physical Review 138 A225

    [10]

    Tan Y H, Li X J, Tian L L, Yu Z P 2008 IEEE Trans.Electron Devices 55 1386

  • [1]

    Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 物理学报 58 4948]

    [2]

    Thompson S E, Sun G Y, Choi Y S 2006 IEEE Trans.Electron Devices 53 1010

    [3]

    Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827

    [4]

    Ma J L, Zhang H M, Song J J, Wang G Y, Wang X Y 2011 Acta Phys.Sin. 60 017101 (in Chinese) [马建立, 张鹤鸣, 宋建军, 王冠宇, 王晓艳 2011 物理学报 60 017101]

    [5]

    Rahman M M 2008 International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) p142

    [6]

    Viktor S, Siegfried S 2008 Solid-State Electronics 52 1861

    [7]

    Soline R, Nicolas C 2003 Journal of Applied Physics 94 5088

    [8]

    Dhar S, Ungersbök E, Kosina S, Grasser T, Selberherr S 2007 IEEE Trans.Nano. 6 97

    [9]

    Hensel J C, Hasegawa H, Nakayama M 1965 Physical Review 138 A225

    [10]

    Tan Y H, Li X J, Tian L L, Yu Z P 2008 IEEE Trans.Electron Devices 55 1386

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  • 文章访问数:  7183
  • PDF下载量:  814
  • 被引次数: 0
出版历程
  • 收稿日期:  2011-07-25
  • 修回日期:  2012-05-10
  • 刊出日期:  2012-05-05

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