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InAlAs/GaSbAs/InP DHBT与InP/GaSbAs/InP DHBT性能比较分析

周守利 杨万春 任宏亮 李伽

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InAlAs/GaSbAs/InP DHBT与InP/GaSbAs/InP DHBT性能比较分析

周守利, 杨万春, 任宏亮, 李伽

Comparison of the performance for InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT

Zhou Shou-Li, Yang Wan-Chun, Ren Hong-Liang, Li Jia
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  • 双异质结双极晶体管(DHBT)的性能与发射区-基区(E-B) 异质结和基区-集电区(B-C)异质结的能带突变类型关系密切, 本文基于热场发射-扩散模型, 对两类不同能带结构类型的新型DHBT的性能做了比较分析. 结论表明: 与作为当今研究热点的E-B和B-C异质结构均为全交错II型能带结构的InP/GaSbAs/InP DHBT的性能相比, E-B异质结采用传统I型、B-C异质结采用交错II型的一类新型能带结构的InAlAs/GaSbAs/InP DHBT虽然在开启电压上更高, 但具有更好的电流驱动能力、直流增益和高频性能.
    The characteristics of a double heterojunction bipolar transistor(DHBT) depend closely on the type of band alignment structure at the hetero-interface between emitter-base(E-B) heterojunction and base-collector(B-C) heterojunction. Based on thermionic-field-diffusion model, the comparisons are made of the DC and the RF characteristics between two novel HBTs, that is, InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT, of which the former has a type-I E-B junction and a type-II B-C junction and the later has a type-II E-B junction and a type-II B-C junction. The simulation results show that DHBT with a type-I E-B junction and a type-II B-C junction has much better current driving capability, DC gain and RF performance, although it has a slightly high turn-on voltage.
    • 基金项目: 信息功能材料国家重点实验室2009开放基金项目(批准号: FMI2009-08), 湖南省教育厅项目(批准号: 09C959)和湖南省科技厅项目(批准号: 2010TY2003)资助的课题.
    • Funds: Project supported by the Open Fund of State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (Grant No. FMI2009-08), the Hunan Province Education Department (Grant No. 09C959), and the Hunan Provincial Science and Technology Department (Grant No. 2010TY2003).
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  • [1]

    Qin Z H, Li X J 2009 Semiconductor Technology 34 721 (in Chinese) [齐志华, 李献杰 2009 半导体技术 34 721]

    [2]

    Bolognesi C R, Dvorak M M W, Yeo P, Xu X G, Watkins S P 2001 IEEE Transactions on Electron Devices 48 2631

    [3]

    Lye B C, Houlston P A, Yow H K, Button C C 1998 IEEE Trans Electron Devices 45 2417

    [4]

    Lovblom R, Fluckiger R, Zeng Yuping, Ostinelli O, Alt A R, Benedickter H, Bolognesi C R 2011 IEEE Electron Device Letters 32 629

    [5]

    Teppati V, Zeng Yuping, Ostinelli O, Bolognesi C R 2011 IEEE Electron Device Letters 32 886

    [6]

    Chang Y H, Syu R H 2010 Microelectronics Reliability 50 70

    [7]

    Zeng Y P, Ostinelli O, Liu H G, Bolognesi C R 2008 Solid-State Electronics 52 1202

    [8]

    Tao N G, Liu H G, Bolognesi C R 2007 Solid-State Electronics 51 995

    [9]

    Pana C T, Wanga C M, Hsina Y M, Zhub H J, Kuob J M, Kaob Y C 2009 Solid-State Electronics 53 574

    [10]

    Garcia-Loureiro A J, Lopez-Gonzalez J M 2004 International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 17 29

    [11]

    Yang K, East J R, Haddad H I 1993 Solid-State Electron 36 321

    [12]

    Zhou S L, Ren X M 2008 Chinese Journal of Semiconductors 29 741 (in Chinese) [周守利, 任晓敏 2008 半导体学报 29 741]

    [13]

    J M Lopez 1997 IEEE Trans. Electron Devices 44 1046

    [14]

    Zhou S L, Cui H L, Huang Y Q, Ren X M 2006 Chinese Journal of Semiconductors 27 110 (in Chinese) [周守利, 崔海林, 黄永清, 任晓敏 2006 半导体学报 27 110]

    [15]

    Zhou S L, Huang H, Huang Y Q, Ren X M 2007 Acta Physica Sinica 56 2890 (in Chinese) [周守利, 黄辉, 黄永清, 任晓敏 2007 物理学报 56 2890]

    [16]

    Lee J M, Lee T W, Park S H, Minb B G, Parkb M P, Leeb KH, Choia I H 2001 Mater. Sci. Engineering B 79 63

    [17]

    Yi C G, Kim T H, Brown A S 2002 Journal of Electronic Materials 31 95

    [18]

    Oon Sim Ang 1990 MS Thesis (Vancouver of Canada: The University of British Columbia)

    [19]

    Yi C H 2002 Ph. D. Dissertation (Atlanta of USA: Georgia Institute of Technology)

    [20]

    Gao G B, Fan Z F, Morkoc H 1992 Appl. Phys. Lett. 61 198

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出版历程
  • 收稿日期:  2011-09-07
  • 修回日期:  2011-10-31
  • 刊出日期:  2012-06-05

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