3 × √3重构, MnSi1.7纳米线长500—1500 nm, 宽16—18 nm, 高 ~ 3 nm. MnSi薄膜的Mn 2p1/2和Mn2p3/2峰位与MnSi1.7纳米线相同, 均分别为649.7 eV和638.7 eV. 结合能在640—645 eV和 ~653.8 eV处的锰氧化合物的Mn 2p3/2和Mn 2p1/2 峰证明在短暂暴露于空气中后MnSi薄膜和MnSi1.7纳米线表面有氧化层形成. 两种锰硅化合物Si 2p谱中向低结合能方向的化学位移表明随着锰硅化合物的形成, Si的化学环境发生了变化."/>         3 × √3 reconstruction, and that the MnSi1.7 nanowires are about ~ 3 nm high, 16—18 nm wide and 500—1500 nm long. The binding energies of the Mn 2p1/2 level and Mn 2p3/2 level for MnSi film are 649.7 and 638.7 eV, respectively, which coincide with those of MnSi1.7 nanowires. The Mn 2p3/2 and Mn 2p1/2 peaks which are located at 640—645 eV and ~653.8 eV indicate that an oxide layer formed on the surfaces of film and nanowires because of short-time exposure to the atmosphere. The negative chemical shifts for MnSi film and MnSi1.7 nanowires from Si2p spectra indicate that with the formation of manganese silicides, the chemical state of Si is changed."/>     Si衬底上生长的MnSi薄膜和MnSi<sub>1.7</sub> 纳米线的STM和XPS分析
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物理学报  2012, Vol. 61 Issue (22): 227301     doi:10.7498/aps.61.227301
凝聚物质:电子结构、电学、磁学和光学性质 当期目录| 过刊浏览| 高级检索     
Si衬底上生长的MnSi薄膜和MnSi1.7 纳米线的STM和XPS分析
石高明1 2, 邹志强1 2, 孙立民1, 李玮聪1, 刘晓勇1 2
1. 上海交通大学分析测试中心, 上海 200240;
2. 上海交通大学物理系, 上海 200240
Scanning tunneling mircroscopy and X-ray photoelectron spectroscopy studies of MnSi film and MnSi1.7 nanowires grown on Si substrates
Shi Gao-Ming1 2, Zou Zhi-Qiang1 2, Sun Li-Min1, Li Wei-Cong1, Liu Xiao-Yong1 2
1. Instrumental Analysis Center, Shanghai Jiaotong University, Shanghai 200240, China;
2. Department of Physics, Shanghai Jiaotong University, Shanghai 200240, China

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