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带孔硅纳米薄膜热整流及声子散射特性研究

鞠生宏 梁新刚

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带孔硅纳米薄膜热整流及声子散射特性研究

鞠生宏, 梁新刚

Thermal rectification and phonon scattering in silicon nanofilm with triangle hole

Ju Sheng-Hong, Liang Xin-Gang
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  • 本文基于非平衡的分子动力学模拟方法计算了带有三角形孔的硅纳米薄膜的界面热阻特性, 结果表明300–1100 K范围内随着热流方向的改变, 在含有三角形孔的硅纳米薄膜中存在热整流效应, 热整流系数达28%. 同时借助于声子波包动力学模拟方法, 获得了不同频率下的纵波声子在三角形孔处的散射特性, 结果表明纵波声子在散射过程中产生了横波声子, 并且从三角形底部向顶部入射的声子能量透射系数比反向时平均低22%. 不对称结构引起的声子透射率的差异是引起热整流效应的主要因素.
    Thermal rectification has potential applications in the thermal management of electronics and energy saving. Discovering thermal rectification phenomena and understanding the mechanism are very essential. Reported in this paper is the thermal rectification in silicon nanofilm with triangle holes by the non-equilibrium molecular dynamics simulation. The results show that in the silicon nanofilm with triangle holes, the difference in thermal rectification coefficient is around 28% with the variation of heat flow direction in a temperature range from 300 K to 1100 K. The phonon wave packet dynamic simulations indicate that transverse phonons are generated during the scattering of longitudinal phonons in the nanofilms. When the phonon transport direction is reversed, the average phonon energy transmission coefficient is changed by about 22% in all the frequency range. The difference in phonon transmissity, which is caused by asymmetric structure, is regarded as being attributed mainly to the thermal rectification in silicon film with triangle holes.
    • 基金项目: 国家重点基础研究发展计划(批准号:2012CB933200)和国家自然科学 基金(批准号:51176091)资助的课题.
    • Funds: Project supported by the State Key Development Program for Basic Research of China (Grant No. 2012CB933200), and the National Natural Science Foundation of China (Grant No. 51176091).
    [1]

    Roberts N A, Walker D G 2011 Int. J. Therm. Sci. 50 648

    [2]

    Terraneo M, Peyrard M, Casati G 2002 Phys. Rev. Lett. 88 094302

    [3]

    Li B W, Wang L, Casati G 2004 Phys. Rev. Lett. 93 184301

    [4]

    Li B W, Lan J H, Wang L 2005 Phys. Rev. Lett. 95 104302

    [5]

    Wang S C, Liang X G 2011 Int. J. Therm. Sci. 50 680

    [6]

    Ju S H, Liang X G, Wang S C 2010 J. Phys. D: Appl. Phys. 43 085407

    [7]

    Hu J N, Ruan X L, Chen Y P 2009 Nano Lett. 9 2730

    [8]

    Yang N, Zhang G, Li B W 2009 Appl. Phys. Lett. 95 033107

    [9]

    Wu G, Li B W 2007 Phys. Rev. B 76 085424

    [10]

    Jiang J W, Wang J S, Li B 2010 Europhys. Lett. 89 46005

    [11]

    Ju S H, Liang X G 2012 J. Appl. Phys. 112 024307

    [12]

    Yue B 2006 Master Dissertation (Beijing: Tsinghua University) (in Chinese) [岳宝 2006 硕士学位论文 (北京:清华大学)]

    [13]

    Sun L 2003 Master Dissertation (Beijing: Tsinghua University) (in Chinese) [孙麟 2003 硕士学位论文 (北京:清华大学)]

    [14]

    Zhang M P, Zhong W R, Ai B Q 2011 Acta Phys. Sin. 60 060511 (in Chinese) [张茂平, 钟伟荣, 艾保全 2011 物理学报 60 060511]

    [15]

    Zhang J R, Jin Y 2002 Mater. Sci. .Eng. 20 432 (in Chinese) [张九如, 金燕 2002 材料科学与工程 20 432]

    [16]

    Wang J, Li J Y, Zheng Z G 2010 Acta Phys. Sin. 59 476 (in Chinese) [王军, 李京颍, 郑志刚 2010 物理学报 59 476]

    [17]

    Kobayashi W, Teraoka Y, Terasaki I 2009 Appl. Phys. Lett. 95 171905

    [18]

    Sawaki W, Kobayashi W, Moritomo Y, Terasaki I 2011 Appl. Phys. Lett. 98 081915

    [19]

    Chang C W, Okawa S, Majumdar A, Zettl A 2006 Science 314 1121

    [20]

    Mller-Plathe F 1997 J. Chem. Phys. 106 6082

    [21]

    Schelling P K, Phillpot S R, Keblinski P 2002 Appl. Phys. Lett. 80 2484

  • [1]

    Roberts N A, Walker D G 2011 Int. J. Therm. Sci. 50 648

    [2]

    Terraneo M, Peyrard M, Casati G 2002 Phys. Rev. Lett. 88 094302

    [3]

    Li B W, Wang L, Casati G 2004 Phys. Rev. Lett. 93 184301

    [4]

    Li B W, Lan J H, Wang L 2005 Phys. Rev. Lett. 95 104302

    [5]

    Wang S C, Liang X G 2011 Int. J. Therm. Sci. 50 680

    [6]

    Ju S H, Liang X G, Wang S C 2010 J. Phys. D: Appl. Phys. 43 085407

    [7]

    Hu J N, Ruan X L, Chen Y P 2009 Nano Lett. 9 2730

    [8]

    Yang N, Zhang G, Li B W 2009 Appl. Phys. Lett. 95 033107

    [9]

    Wu G, Li B W 2007 Phys. Rev. B 76 085424

    [10]

    Jiang J W, Wang J S, Li B 2010 Europhys. Lett. 89 46005

    [11]

    Ju S H, Liang X G 2012 J. Appl. Phys. 112 024307

    [12]

    Yue B 2006 Master Dissertation (Beijing: Tsinghua University) (in Chinese) [岳宝 2006 硕士学位论文 (北京:清华大学)]

    [13]

    Sun L 2003 Master Dissertation (Beijing: Tsinghua University) (in Chinese) [孙麟 2003 硕士学位论文 (北京:清华大学)]

    [14]

    Zhang M P, Zhong W R, Ai B Q 2011 Acta Phys. Sin. 60 060511 (in Chinese) [张茂平, 钟伟荣, 艾保全 2011 物理学报 60 060511]

    [15]

    Zhang J R, Jin Y 2002 Mater. Sci. .Eng. 20 432 (in Chinese) [张九如, 金燕 2002 材料科学与工程 20 432]

    [16]

    Wang J, Li J Y, Zheng Z G 2010 Acta Phys. Sin. 59 476 (in Chinese) [王军, 李京颍, 郑志刚 2010 物理学报 59 476]

    [17]

    Kobayashi W, Teraoka Y, Terasaki I 2009 Appl. Phys. Lett. 95 171905

    [18]

    Sawaki W, Kobayashi W, Moritomo Y, Terasaki I 2011 Appl. Phys. Lett. 98 081915

    [19]

    Chang C W, Okawa S, Majumdar A, Zettl A 2006 Science 314 1121

    [20]

    Mller-Plathe F 1997 J. Chem. Phys. 106 6082

    [21]

    Schelling P K, Phillpot S R, Keblinski P 2002 Appl. Phys. Lett. 80 2484

计量
  • 文章访问数:  7483
  • PDF下载量:  5775
  • 被引次数: 0
出版历程
  • 收稿日期:  2012-07-20
  • 修回日期:  2012-08-28
  • 刊出日期:  2013-01-05

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