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AlGaAs/InGaAs PHEMT栅电流参数退化模型研究

万宁 郭春生 张燕峰 熊聪 马卫东 石磊 李睿 冯士维

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AlGaAs/InGaAs PHEMT栅电流参数退化模型研究

万宁, 郭春生, 张燕峰, 熊聪, 马卫东, 石磊, 李睿, 冯士维

Gate current degradation model of the AlGaAs/InGaAs PHEMT

Wan Ning, Guo Chun-Sheng, Zhang Yan-Feng, Xiong Cong, Ma Wei-Dong, Shi Lei, Li Rui, Feng Shi-Wei
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  • 为定量研究在PHEMT栅电流退化过程中, 不同失效机理对应的参数退化时间常数及退化比例, 本文基于退化过程中物理化学反应中反应量浓度与反应速率的关系, 建立了PHEMT栅电流参数退化模型. 利用在线实验的方法获得PHEMT电学参数的退化规律, 分析参数随时间的退化规律, 得到不同时间段内影响栅电流退化的失效机理, 并基于栅电流参数退化模型, 得到了不同的失效机理对应的参数退化时间常数及退化比例.
    For quantitative study of time constant and degradation ratio of degradation parameters which correspond to different failure mechanisms in pseudomorphic high electron mobility transistor (PHEMT) gate current degradation process, a PHEMT gate current degradation model is established based on the relationship between reaction volume concentration and reaction rate in the process of degradation. The degradation law of PHEMT electrical parameters is obtained using online experiment method. The parameter degradation law with the time is analyzed and the failure mechanism which affects gate current degradation in different time period is obtained. Meanwhile, based on the gate current parameter degradation model, time constant and degradation ratio of degradation parameters, which correspond to different failure mechanisms, are also obtained.
    • 基金项目: 国家自然科学基金(批准号: 61204081)和广东省重大科技专项项目 (批准号: 粤科规划字[2012]129)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61204081), and the Major Science and Technology Special Project of Guangdong province, China (Grant No. Guangdong planning words [2012] 129).
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    Jason B S, Jiann S Y 2012 Microelectron. Reliab. 52 2932

    [2]

    Liu H X, Zheng X F, Han X L, Hao Y, Zhang M 2003 Acta Phys. Sin. 52 2576 (in Chinese) [刘红侠, 郑雪峰, 韩晓亮, 郝跃, 张绵 2003 物理学报 52 2576]

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    Gaudenzio M,Alessadro P, Youcef H, Claudio C, Eneico Z 1996 Appl. Phys. Lett. 69 1411

    [4]

    Huang H K, Wang C S, Wang Y H, Wu C L, Chang C S 2003 Proceedings of GaAs Reliability Workshop Baltimore, USA, October 21, 2001 p57

    [5]

    Gaudenzio M, Eneico Z 2002 Microelectron. Reliab. 42 685

    [6]

    Chen K H, Chang C Y, Leu L C, Lo C F, Chu B H 2010 J.Vac. Sci. Technol. B 28 365

    [7]

    Guo C S, Wan N, Ma W D, Xiong C, Zhang G C, Feng S W 2011 Acta Phys. Sin. 60 128501 (in Chinese) [郭春生, 万宁, 马卫东, 熊聪, 张光沉, 冯士维 2011 物理学报 60 128501]

    [8]

    Yang Y H 2012 Physical Chemistry (Beijing: Higher Education Press) (in Chinese) [杨永华 2012 物理化学 (北京: 高等教育出版社)]

  • [1]

    Jason B S, Jiann S Y 2012 Microelectron. Reliab. 52 2932

    [2]

    Liu H X, Zheng X F, Han X L, Hao Y, Zhang M 2003 Acta Phys. Sin. 52 2576 (in Chinese) [刘红侠, 郑雪峰, 韩晓亮, 郝跃, 张绵 2003 物理学报 52 2576]

    [3]

    Gaudenzio M,Alessadro P, Youcef H, Claudio C, Eneico Z 1996 Appl. Phys. Lett. 69 1411

    [4]

    Huang H K, Wang C S, Wang Y H, Wu C L, Chang C S 2003 Proceedings of GaAs Reliability Workshop Baltimore, USA, October 21, 2001 p57

    [5]

    Gaudenzio M, Eneico Z 2002 Microelectron. Reliab. 42 685

    [6]

    Chen K H, Chang C Y, Leu L C, Lo C F, Chu B H 2010 J.Vac. Sci. Technol. B 28 365

    [7]

    Guo C S, Wan N, Ma W D, Xiong C, Zhang G C, Feng S W 2011 Acta Phys. Sin. 60 128501 (in Chinese) [郭春生, 万宁, 马卫东, 熊聪, 张光沉, 冯士维 2011 物理学报 60 128501]

    [8]

    Yang Y H 2012 Physical Chemistry (Beijing: Higher Education Press) (in Chinese) [杨永华 2012 物理化学 (北京: 高等教育出版社)]

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出版历程
  • 收稿日期:  2013-03-23
  • 修回日期:  2013-04-15
  • 刊出日期:  2013-08-05

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