E 都遵循良好的线性关系, 表明漏电流均由电子Frenkel-Poole (FP) 发射主导. 退化后 log(IFT/E)与√E 曲线斜率的减小, 以及利用EMMI在栅边缘直接观察到了与缺陷存在对应关系的“热点”, 证明了漏电流退化的机理是: 高电场在AlGaN层中诱发了新的缺陷, 而缺陷密度的增加导致了FP发射电流IFT的增加.

"/>         E both before and after degradation, indicating that the leakage current is dominated by the Frenkel-Poole (FP) emission. The slope of log(IFT/E)-√E curve decreases after degradation, and the ‘hot spots’ corresponding to defects are directly observed by EMMI at the gate edge of the degraded device, suggesting that the degradation mechanism is: New defects are induced by high electric field in the AlGaN layer, and the increase of defect density leads to the increase of FP emission current.

"/>     AlGaN/GaN 高电子迁移率晶体管漏电流退化机理研究
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物理学报  2013, Vol. 62 Issue (15): 157202     doi:10.7498/aps.62.157202
凝聚物质: 电子结构、电学、磁学和光学性质 当期目录| 过刊浏览| 高级检索     
AlGaN/GaN 高电子迁移率晶体管漏电流退化机理研究
任舰, 闫大为, 顾晓峰
轻工过程先进控制教育部重点实验室, 江南大学电子工程系, 无锡 214122
Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors
Ren Jian, Yan Da-Wei, Gu Xiao-Feng
Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China

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