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水浴法合成ZnO纳米线薄膜的工艺参数直接影响其表面形貌, 并使其接触角及润湿性能发生变化. 本文仿真分析了轮廓算数平均偏差、偏斜度、峭度、相关长度等特征参数对随机粗糙表面特性的影响规律; 改变生长时间、种子层溶液和生长液的浓度, 批量制备了表面形貌不同的ZnO纳米线薄膜; 提出了取样长度的确定方法, 并基于扫描电镜图像和Matlab图像处理算子对ZnO纳米线薄膜表面形貌的特征参数进行了提取; 将表面形貌高度和水平方向的特征参数引入Wenzel模型, 分析了合成参数、表面形貌特征参数与接触角的影响关系. 结果表明, 合成参数变化时, 选择取样长度5.0 μm为宜; 生长液浓度大于0.125 mol/L时, ZnO纳米线之间发生重结晶, 并呈现疏水性; 改变种子层溶液浓度和生长时间, 均得到超亲水表面. 上述结论可用于不同氧化酶、细胞等在ZnO纳米线薄膜上的有效吸附及相应传感器测试性能的进一步提高.Synthesizing parameters in the hydrothermal method can affect directly the morphology and the contact angles of ZnO nanowires films, and thus the controllable wettability. In this paper effects of characteristic parameters on the properties of random rough surfaces are simulated, including arithmetical mean deviation of the profile, skewness, kurtosis and correlation length. Batches of ZnO nanowires films with varied morphology were synthesized in different concentrations of seed layer solution and growth solution, as well as growth time spans. Sampling length was determined and characteristic parameters of the profiles of ZnO nanowires films were extracted based on SEM micrographs and specific operators of Matlab software. With vertical and lateral parameters of the morphology introduced into Wenzel model, relationships between synthesizing parameters, morphology, and contact angles of ZnO nanowires films were established. It is conculded that the sampling length was determined to be 5 μm, crystallization between ZnO nanowires occurred as the concentration of growth solution was larger than 0.125 mol/L, resulting in hydrophobic ZnO nanowires films; different concentrations of seed layer solution and growth time spans led to hydrophilic ZnO nanowire films. These results can be used to immobilize various enzymes on ZnO nanowires films and further to improve the property of ZnO nanowires-based bio-sensors.
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Keywords:
- ZnO nanowire /
- hydrothermal synthesis /
- surface morphology /
- contact angle
[1] Dar G H, Umar A, Zaidi S A, Baskoutas S, Kim S H, Abaker M, Al-Hajry A, AL-Sayari S A 2011 Science of Advanced Materials 3 901
[2] Zhao Z, Lei W, Zhang X, Wang B, Jiang H 2010 Sensors 10 1216
[3] Li D Z, Zhu R 2013 Chin. Phys. B 22 018502
[4] Wei A, Wang Z, Pan L H, Li W W, Xiong L, Dong X C, Huang W 2011 Chin. Phys. Lett. 28 080702
[5] Chang S J, Weng W Y, Hsu C L, Hsueh T J 2010 Nano Communication Networks 1 283
[6] Ciofani G, Genchi G G, Mattoli V 2012 Materials Science and Engineering C 32 341
[7] Song Z M, Zhao D X, Guo Z, Li B H, Zhang Z Z, Shen D Z 2012 Acta Phys. Sin. 61 0252901 (in Chinese) [宋志明, 赵东旭, 郭振, 李炳辉, 张振中, 申德振 2012 物理学报 61 0252901]
[8] Zheng Z K, Duanmu Q D, Zhao G X, Wang L D, Shen D Z 2012 Chin. Phys. Lett. 29 017804
[9] Chen X M, Ji Y, Gao X Y, Zhao X W 2012 Chin. Phys. B 21 116801
[10] Yang Y H, Li Z Y, Wang B, Wang C X, Chen D H, Yang G W 2005 J. Phys.: Condens. Matter 17 5441
[11] Feng X J, Feng L, Jin M H, Zhai J, Jiang L, Zhu D B 2004 J. Am. Chem. Soc. 126 62
[12] L J G, Huang K, Chen X M, Zhu J B, Meng F M, Song X P, Sun Z Q 2010 Applied Surface Science 256 4720
[13] Gong M G, Xu X L, Yang Z, Liu Y S, Liu L 2010 Chin. Phys. B 19 056701
[14] Reizer R 2010 Wear 271 539
[15] Watson W, Spedding T A 1982 Wear 83 215
[16] Hu Y Z, Tonder K 1992 Mach Tools Manufact 32 83
[17] Wenzel R N 1936 Industrial and Engineering Chemistry 28 988
[18] Cassie A B D, Baxter S 1944 Transactions of the Faraday Society 40 546
[19] McHale G 2007 Langmuir 23 8200
[20] Nosonovsky M, Bhushan B 2008 Langmuir 24 1525
[21] Sun H, Zhang Q F, Wu J L 2006 Acta Phys. Sin. 56 3479 (in Chinese) [孙晖, 张琦锋, 吴锦雷 2006 物理学报 56 3479]
[22] He Y, Jiang C Y, Yin H X, Chen J, Yuan W Z 2011 Journal of Colloid and Interface Science 364 219
[23] Youssef S, Combette P, Podlecki J, Al-Asmar R, Foucaran A 2009 Cryst. Growth Des. 9 1088
[24] Yan J F, You T G, Zhang Z Y, Tian J X, Yun J N, Zhao W 2012 Chin. Phys. B 21 098001
[25] ISO 4287:1997, Geometrical Product Specifications (GPS)–Surface texture: Profile method–Terms, definitions and surface texture parameters
[26] Nosonovsky M 2007 Langmuir 23 9919
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[1] Dar G H, Umar A, Zaidi S A, Baskoutas S, Kim S H, Abaker M, Al-Hajry A, AL-Sayari S A 2011 Science of Advanced Materials 3 901
[2] Zhao Z, Lei W, Zhang X, Wang B, Jiang H 2010 Sensors 10 1216
[3] Li D Z, Zhu R 2013 Chin. Phys. B 22 018502
[4] Wei A, Wang Z, Pan L H, Li W W, Xiong L, Dong X C, Huang W 2011 Chin. Phys. Lett. 28 080702
[5] Chang S J, Weng W Y, Hsu C L, Hsueh T J 2010 Nano Communication Networks 1 283
[6] Ciofani G, Genchi G G, Mattoli V 2012 Materials Science and Engineering C 32 341
[7] Song Z M, Zhao D X, Guo Z, Li B H, Zhang Z Z, Shen D Z 2012 Acta Phys. Sin. 61 0252901 (in Chinese) [宋志明, 赵东旭, 郭振, 李炳辉, 张振中, 申德振 2012 物理学报 61 0252901]
[8] Zheng Z K, Duanmu Q D, Zhao G X, Wang L D, Shen D Z 2012 Chin. Phys. Lett. 29 017804
[9] Chen X M, Ji Y, Gao X Y, Zhao X W 2012 Chin. Phys. B 21 116801
[10] Yang Y H, Li Z Y, Wang B, Wang C X, Chen D H, Yang G W 2005 J. Phys.: Condens. Matter 17 5441
[11] Feng X J, Feng L, Jin M H, Zhai J, Jiang L, Zhu D B 2004 J. Am. Chem. Soc. 126 62
[12] L J G, Huang K, Chen X M, Zhu J B, Meng F M, Song X P, Sun Z Q 2010 Applied Surface Science 256 4720
[13] Gong M G, Xu X L, Yang Z, Liu Y S, Liu L 2010 Chin. Phys. B 19 056701
[14] Reizer R 2010 Wear 271 539
[15] Watson W, Spedding T A 1982 Wear 83 215
[16] Hu Y Z, Tonder K 1992 Mach Tools Manufact 32 83
[17] Wenzel R N 1936 Industrial and Engineering Chemistry 28 988
[18] Cassie A B D, Baxter S 1944 Transactions of the Faraday Society 40 546
[19] McHale G 2007 Langmuir 23 8200
[20] Nosonovsky M, Bhushan B 2008 Langmuir 24 1525
[21] Sun H, Zhang Q F, Wu J L 2006 Acta Phys. Sin. 56 3479 (in Chinese) [孙晖, 张琦锋, 吴锦雷 2006 物理学报 56 3479]
[22] He Y, Jiang C Y, Yin H X, Chen J, Yuan W Z 2011 Journal of Colloid and Interface Science 364 219
[23] Youssef S, Combette P, Podlecki J, Al-Asmar R, Foucaran A 2009 Cryst. Growth Des. 9 1088
[24] Yan J F, You T G, Zhang Z Y, Tian J X, Yun J N, Zhao W 2012 Chin. Phys. B 21 098001
[25] ISO 4287:1997, Geometrical Product Specifications (GPS)–Surface texture: Profile method–Terms, definitions and surface texture parameters
[26] Nosonovsky M 2007 Langmuir 23 9919
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