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描述了用低能电子衍射(LEED)研究不同温度下在Si(100)-c(8×8)表面吸氢引起的一系列相变过程。实验发现:在液氮温度下,在Si(100)-c(8×8)表面连续吸氢将引起表面经Si(100)-(4×1)-H向(2×1)-H最终向(1×1)-H转变;而在从700℃到室温间的不同温度下饱和吸氢,实验中观察到:Si(100)-c(8×8)表面将先转变至Si(100)-c(4×4)-H,然后至(2×1)-最终至(1×1)-H。Phase transitions on a clean reconstructed Si(100)-c(8×8) surface induced by atomic hydrogen adsorption at different temperatures have been studied using low energy electron diffraction (LEED) . It has been found that: at liquid nitrogen temperature, successive dosing of atomic hydrogen cause the surface go through a series of phase transitions from c(8×8)to(4×l)-H to(2×l)-H and finally to (1×1)- H. At different temperatures from 700×3 down to room temperature, successive saturation doses of atomic hydrogen can induce phase transitions from c(8×8)to c(4×4)-H to (2×1)-H and finally to(1×1)-H.
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