20],[1210]和[2110]三个晶向有序生长,反映了衬底对CuPc的影响. 原子力显微镜结果表明,CuPc在MoS2 衬底上遵循层状-岛状生长模式:在低生长厚度下(单层薄膜厚度约为0.3 nm),CuPc分子平面平行于MoS2表面上形成均匀连续的薄膜; 在较高的沉积厚度下,CuPc沿衬底晶向形成棒状晶粒,表现出明显的各向异性. 光电子能谱显示界面偶极层为0.07 eV,而且能谱在膜厚1.2 nm饱和,揭示了酞菁铜与MoS2(0001)范德瓦耳斯异质结的能级结构."/>         20], [1210] and [2110]) of MoS2 (0001) substrate, respectively. The AFM measurements show that the growth of CuPc on MoS2 (0001) occurs in a Stranski-Krastanov mode. The CuPc molecule can be flat-laying on MoS2(0001) at low coverage (~0.3 nm), but form strip-like crystals along the surface crystal axes of MoS2 (0001) at high coverage (>2.4 nm). The CuPc molecule shows obvious anisotropy, indicating that the molecular plane is not parallel to the MoS2 surface. The PES measurements show there is no charge transfer process at the interface, indicating weak van der Waals interaction between CuPc and MoS2(0001)."/>     酞菁铜与MoS<sub>2</sub>(0001)范德瓦耳斯异质结研究
物理学报
引用检索 快速检索
物理学报  2014, Vol. 63 Issue (16): 167903     doi:10.7498/aps.63.167903
凝聚物质:电子结构、电学、磁学和光学性质 当期目录| 过刊浏览| 高级检索     
酞菁铜与MoS2(0001)范德瓦耳斯异质结研究
曹宁通1, 张雷1, 吕路1, 谢海鹏1, 黄寒1, 牛冬梅1, 高永立1 2
1. 中南大学先进材料超微结构与超快过程研究所, 长沙 410083;
2. Department of Physics and Astronomy, University of Rochester, Rochester 14627, USA
van der Waals heterostructure about CuPc/MoS2(0001)
Cao Ning-Tong1, Zhang Lei1, Lü Lu1, Xie Hai-Peng1, Huang Han1, Niu Dong-Mei1, Gao Yong-Li1 2
1. Institute of Super-Microstructure and Ultrafast Process in Advanced Materials, Central South University, Changsha 410083, China;
2. Department of Physics and Astronomy, University of Rochester, Rochester 14627, USA

版权所有 ©  物理学报
地址:北京市603信箱,《物理学报》编辑部 邮编:100190
电话:010-82649294,82649829,82649863   E-mail:apsoffice@iphy.ac.cn
网络系统维护电话:010-62662699-1; 技术支持邮箱 linjl@magtech.com.cn