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本文在5.6 GPa, 12501340 ℃的条件下, 利用温度梯度法, 以FeNiMnCo 合金为触媒, 沿籽晶的(100)晶面成功合成了不同晶形的优质Ib型和IIa型金刚石大单晶. 利用激光拉曼附件显微镜, 分别对上述不同温度下合成的两类金刚石样品上表面(100)面的中心区域及棱角区域进行观察分析. 研究发现, Ib型和IIa型金刚石大单晶(100)晶面上从中心到棱角处黑色纹路的分布逐渐变黑变密集; 另外, 随着金刚石合成温度的升高, Ib型金刚石大单晶(100)面上黑色纹路由稀疏逐渐变稠密, 而IIa型金刚石大单晶的黑色纹路较为稀疏; Ib型金刚石大单晶的形貌特征表现为从低温晶体的不规则分布过渡到中温、高温晶体的典型树枝状分布. IIa型金刚石大单晶(100)面特征随温度变化规律与Ib型的类似. 这两类金刚石大单晶表面特征的差异可能是由于IIa 型金刚石具有比Ib型更小的生长速度和更少的氮含量. 最后, 对两类塔状金刚石大单晶进行拉曼光谱测试分析, 结果表明IIa型金刚石大单晶的品质较Ib型金刚石大单晶好.In this paper, by choosing FeNiMnCo alloy as a catalyst and the (100) face of a seed crystal as the growth face, high quality type Ib and type IIa large diamond single crystals (diameter about 3-4 mm) can be successfully synthesized using temperature gradient method, at 5.6 GPa pressure and different temperatures between 1250-1340 ℃. To control the diamond crystal morphology, the growth temperature should be adjusted. Then the morphology of the synthesized large diamonds is plate-like at low temperatures, tower-like at medium temperatures, and spire tower-like at high temperatures. For the same crystal morphology, the synthetic temperature of type IIa diamond single crystals is about 30 ℃ higher than that of type Ib. The central and angularity regions of the top (100) surface, for the synthesized samples of type Ib and type IIa large diamond single crystals at different temperatures, are examined by laser Raman microscope respectively. It is found that the black lines of the type Ib and type IIa large diamond single crystals become dimmed and dense on the same top surface from center to the edge. It is indicated that the priority growth mechanism is in the angularity regions, compared with the central regions. Namely the solute of carbon is primarily precipitated in the angularity regions of the (100) surface. With increasing synthesis temperature, the black lines on the top surface (100) of type Ib diamond single crystals become gradually denser, and the characteristics of the lines are transformed from irregular distribution to typical dendritic distribution. The reason of the above results is that the rate of carbon deposition (the growth rate of diamond crystal), which is along the direction of the diamond crystal [100], will gradually rise as the synthesis temperature of the crystal is increased. The characteristics of the lines on the top surfaces (100) of type IIa large diamond single crystals, which are synthesized under different temperatures, are similar to that of type Ib. However, the lines on the top (100) surface of type IIa diamonds are not so obvious and denser than that of type Ib diamonds at different synthesis temperatures. Similar characteristics of lines on the top (100) surface of both types of diamond single crystals can be explained by the axis and radial growth rate variation at different temperatures. These different characteristics of the lines are due to the fact that the growth rate of type IIa diamonds is slower than that of type Ib diamonds, and the nitrogen concentrations in type IIa diamonds are lower than those of type Ib diamonds. Finally, the full width at half maximum (5.554 cm-1) of the tower-like type IIa diamond is narrower than that (5.842 cm-1) of tower-like type Ib diamond from the test of Raman spectra. It is shown that the quality of type IIa diamond single crystals is better than that of type Ib.
[1] Sumiya H, Toda N, Satoh S 1971 J. Phys. Chem. 75 1838
[2] Strong H M, Chrenko R M 1971 J. Phys. Chem. 75 1838
[3] Sumiya H, Toda N, Satoh S 2002 Journal of Crystal Growth 237-239 1281
[4] Sumiya H, Toda N, Nishibayashi Y, Satoh S 1997 Journal of Crystal Growth 178 485
[5] Li Y, Jia X P, Shi W, Leng S L, Ma H A, Sun S S, Wang F b, Chen N, Long Y 2014 In. Journal of Refractory Metals and Hard Materials 43 147
[6] Li S S, Ma H A, Li X L, Su T C, Huang G F, Li Y, Jia X P 2011 Chin. Phys. B 20 028103
[7] Hu M H, Li S S, Ma H A, Su T C, Li X L, Hu Q, Jia X P 2012 Chin. Phys. B 21 098101
[8] Li S S, Li X L, Ma H A, Su T C, Xiao H Y, Huang G F, Li Y, Zhang Y S, Jia X P 2011 Chin. Phys. Lett. 28 068101
[9] Qin J M, Zhang Y, Cao J M, Tian L F 2011 Acta Phys. Sin. 60 058102(in Chinese) [秦杰明, 张莹, 曹建明, 田立飞 2011 物理学报 60 058102]
[10] Liang Z Z, Liang J Q, Zheng N, Jia X P, Li G J 2009 Acta Phys. Sin. 58 8039(in Chinese) [梁中翥, 梁静秋, 郑娜, 贾晓鹏, 李桂菊 2009 物理学报 58 8039]
[11] Yang Z J, Li H Z, Zhou Y Z, Wang X Y, Luo F 2015 In. Journal of Refractory Metals and Hard Materials 48 61
[12] Hu M H, Bi N, Li S S, Su T C, Hu Q, Jia X P, Ma H A 2015 In. Journal of Refractory Metals and Hard Materials 48 61
[13] Yan B M, Jia X P, Sun S S, Zhou Z X, Chao F, Chen N, Li Y D, Li Y, Ma H A, Wang F b, Chen N, Long Y 2015 In. Journal of Refractory Metals and Hard Materials 48 56
[14] Xiao H Y, Li S S, Qin Y K, Liang Z Z, Zhang Y S, Zhang D M, Zhang Y S 2014 Acta Phys. Sin. 63 198101(in Chinese) [肖宏宇, 李尚升, 秦玉琨, 梁中翥, 张永胜, 张冬梅, 张义顺 2014 物理学报 63 198101]
[15] Kanda H, Ohsawa, T, Fukunaga, O, Sunagawa, I 1989 Journal of Crystal Growth 94 115
[16] Kanda H, Ohsawa T 1996 Diamond and Related Materials 5 8
[17] Zang C Y, Huang G F, Ma H A, Jia X P 2007 Chin. Phys. Lett. 24 2991
[18] Zang C Y, Chen K, Hu Q, Huang G F, Chen X Z, Jia X P 2009 Journal of Synthetic Crystals 38 677(in Chinese) [臧传义, 陈奎, 胡强, 黄国锋, 陈孝洲, 贾晓鹏 2009 人工晶体学报 38 677]
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[1] Sumiya H, Toda N, Satoh S 1971 J. Phys. Chem. 75 1838
[2] Strong H M, Chrenko R M 1971 J. Phys. Chem. 75 1838
[3] Sumiya H, Toda N, Satoh S 2002 Journal of Crystal Growth 237-239 1281
[4] Sumiya H, Toda N, Nishibayashi Y, Satoh S 1997 Journal of Crystal Growth 178 485
[5] Li Y, Jia X P, Shi W, Leng S L, Ma H A, Sun S S, Wang F b, Chen N, Long Y 2014 In. Journal of Refractory Metals and Hard Materials 43 147
[6] Li S S, Ma H A, Li X L, Su T C, Huang G F, Li Y, Jia X P 2011 Chin. Phys. B 20 028103
[7] Hu M H, Li S S, Ma H A, Su T C, Li X L, Hu Q, Jia X P 2012 Chin. Phys. B 21 098101
[8] Li S S, Li X L, Ma H A, Su T C, Xiao H Y, Huang G F, Li Y, Zhang Y S, Jia X P 2011 Chin. Phys. Lett. 28 068101
[9] Qin J M, Zhang Y, Cao J M, Tian L F 2011 Acta Phys. Sin. 60 058102(in Chinese) [秦杰明, 张莹, 曹建明, 田立飞 2011 物理学报 60 058102]
[10] Liang Z Z, Liang J Q, Zheng N, Jia X P, Li G J 2009 Acta Phys. Sin. 58 8039(in Chinese) [梁中翥, 梁静秋, 郑娜, 贾晓鹏, 李桂菊 2009 物理学报 58 8039]
[11] Yang Z J, Li H Z, Zhou Y Z, Wang X Y, Luo F 2015 In. Journal of Refractory Metals and Hard Materials 48 61
[12] Hu M H, Bi N, Li S S, Su T C, Hu Q, Jia X P, Ma H A 2015 In. Journal of Refractory Metals and Hard Materials 48 61
[13] Yan B M, Jia X P, Sun S S, Zhou Z X, Chao F, Chen N, Li Y D, Li Y, Ma H A, Wang F b, Chen N, Long Y 2015 In. Journal of Refractory Metals and Hard Materials 48 56
[14] Xiao H Y, Li S S, Qin Y K, Liang Z Z, Zhang Y S, Zhang D M, Zhang Y S 2014 Acta Phys. Sin. 63 198101(in Chinese) [肖宏宇, 李尚升, 秦玉琨, 梁中翥, 张永胜, 张冬梅, 张义顺 2014 物理学报 63 198101]
[15] Kanda H, Ohsawa, T, Fukunaga, O, Sunagawa, I 1989 Journal of Crystal Growth 94 115
[16] Kanda H, Ohsawa T 1996 Diamond and Related Materials 5 8
[17] Zang C Y, Huang G F, Ma H A, Jia X P 2007 Chin. Phys. Lett. 24 2991
[18] Zang C Y, Chen K, Hu Q, Huang G F, Chen X Z, Jia X P 2009 Journal of Synthetic Crystals 38 677(in Chinese) [臧传义, 陈奎, 胡强, 黄国锋, 陈孝洲, 贾晓鹏 2009 人工晶体学报 38 677]
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