搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Si衬底上异质外延金刚石的初始阶段原子H的作用及其界面结构

康 健 肖长永 熊艳云 冯克安 林彰达

引用本文:
Citation:

Si衬底上异质外延金刚石的初始阶段原子H的作用及其界面结构

康 健, 肖长永, 熊艳云, 冯克安, 林彰达

THE EFFECT OF ATOMIC OF HYDROGEN IN THE INITIAL PROCEDURE OF DIAMOND HETEROEPITAXY ON Si AND THE INTERFACE BETWEEN DIAMOND AND Si

KANG JIAN, XIAO CHANG-YONG, XIONG YAN-YUN, FENG KE-AN, LIN ZHANG-DA
PDF
导出引用
  • 用高分辨率电子能量损失谱方法研究了原子H与被C2H2吸附的Si(100)界面的相互作用.结果显示,在Si(100)界面上,Si—Si二聚化键和C2H2中的C—C键被H原子打开,它们分别形成Si—H,C—H键.用AM1量子化学方法,计算了C2H2和C2H4在Si(100)上的吸附结构,指出了C2H2
    The effect of atomic hydrogen on C2H2-covered Si surface was studied by high resolution electron loss spectroscope and low energy electron diffraction, the findings was that atomic hydrogen broke up C—C bond in C2H2 and the Si—Si dimer to form C—H,Si—H respectively. According to experimental phenomena, several cluster models were devised for quantum chemistry calculation. The calculation results agreed to experiment well and the discussions on the reaction sites of C2H2 adsorbed on Si(100) surface and the role of atomic hydrogen and nucleation mechanisn of diamond hetereopitaxy on Si were performed.
    • 基金项目: 国家自然科学基金(批准号:59632010)和国家高技术研究发展计划(批准号:715-002-0031)资助的课题.
计量
  • 文章访问数:  5960
  • PDF下载量:  481
  • 被引次数: 0
出版历程
  • 收稿日期:  1998-11-25
  • 刊出日期:  1999-11-20

/

返回文章
返回