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掺杂纳米硅薄膜中电子自旋共振研究

刘湘娜 徐刚毅 眭云霞 何宇亮 鲍希茂

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掺杂纳米硅薄膜中电子自旋共振研究

刘湘娜, 徐刚毅, 眭云霞, 何宇亮, 鲍希茂

INVESTIGATIONS INTO ELECTRON SPIN RESONANCE IN DOPED NANOCRYSTALLINE SILICON FILMS

LIU XIANG-NA, XU GANG-YI, SUI YUN-XIA, HE YU-LIANG, BAO XI-MAO
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  • 研究了掺杂纳米硅薄膜(nc∶Si∶H)中的电子自旋共振(ESR)及与之相关的缺陷态.样品是用等离子体增强化学气相沉积方法制成,为两相结构,即纳米晶粒镶嵌于非晶本体之中.对掺磷的nc-Si∶H样品,测量出其ESR信号的g值为1.9990—1.9991,线宽ΔHpp为(40—42)×10-4T,ESR密度Nss为1017cm-3数量级.对掺硼的nc-Si∶H样品,其ESR信号的g值为2.0076—2.0078,ΔH
    We report here the studies of electron spin resonance (ESR) and its related defect states in doped nanocrystalline silicon films (nc-Si∶H). The samples used, which was prepared by plasma enhanced CVD method, are of two phases in structure, i. e., nanocrystallites embedded in the amorphous matrix. For phosphorus doped nc-Si∶H samples, the measured ESR g-values are 1.9990—1.9991, the line width ΔHpp(40—42)×10-4T, and the ESR density Nss is of order of 1017cm-3. For boron doped nc-Si∶H samples, the measured ESR g-values are 2.0076—2.0078, ΔHpp is about 18×10-4T, and Nss is of order of 1016cm-3. Considering the micro-structural and conducting characteristics of these kinds of films, we discuss and give explanations to the ESR sources, their ΔHpp and Nss as well. We ascribe the ESR signals in phosphorus doped nc-Si∶H to the unpaired electrons in the high density defect states located in the interfaces of nanocrystallites/amorphous matrix , and that in boron doped ones to the unpaired electrons in the valence band-tail states in the a-Si∶H tissue of their amorphous matrix.
    • 基金项目: 国家自然科学基金(批准号:59832100和E020901)资助的课题.
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  • 文章访问数:  6235
  • PDF下载量:  740
  • 被引次数: 0
出版历程
  • 收稿日期:  2000-07-30
  • 修回日期:  2000-09-14
  • 刊出日期:  2001-03-20

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