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Based on the material data of 4H-SiC, we present a breakdown model for 4H-SiC pn junction diode, which includes both the avalanche impact ionization and the ban d-to-band tunneling. With this model, the influence of tunneling on the breakdow n characteristics of the devices is analyzed. The breakdown mechanism at differe nt temperatures and doping concentrations is explained, and the simulation resul ts can give a nice description for the breakdown characteristics of real devices .
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Keywords:
- silicon carbide /
- pn diode /
- breakdown /
- tunneling effect /
- impact ionization /
- model
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