Fabrication and performance of indium oxide based transparent thin film transistors

Xu Tian-Ning; Wu Hui-Zhen; Zhang Ying-Ying; Wang Xiong; Zhu Xia-Ming; Yuan Zi-Jian

doi:10.7498/aps.59.5018

Abstract

Indium oxide thin film was deposited on glass substrate by radio frequency magnetron sputtering at room temperature. The In2O3 film was polycrystalline with a preferred (111) orientation and a grain size of 33 nm was estimated. The bottom-gate staggered thin film transistors (TFTs) were fabricated by standard photolithography, with In2O3 as active channel layers. The In2O3 TFTs exhibit good gate bias controlling characteristic with a field effect mobility of 6.3 cm2/V·s, an on-off current ratio of 3×103, and a threshold voltage of -0.9 V. Device performance and room temperature fabrication technology make In2O3 TFTs promising for display panel applications.

Keywords:

Authors and contacts

(1)State Key Laboratory for Modern Optical Instruments, Department of Physics, Zhejiang University, Hangzhou 310027, China; (2)State Key Laboratory for Modern Optical Instruments, Department of Physics, Zhejiang University, Hangzhou 310027, China; Department of Science, Zhijiang College of Zhejiang University of Technology, Hangzhou 310024, China

References

[1]	Son K S, Kim T S, Jung J S, Ryu M K, Park K B, Yoo B W, Park K C, Kwon J Y, Lee S Y, Kim J M 2009 Electrochemical and Solid-State Lett. 12 H26
[2]	Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488
[3]	Wu H Z, Liang J, Jin G F, LaoY F, Xu T N 2007 IEEE Trans. Electron Devices 54 2856
[4]	Zhu X M, Wu H Z, Wang S J, Zhang Y Y, Cai C F, Si J X, Yuan Z J, Du X Y, Dong S R 2009 J. Semicond. 30 033001
[5]	Zhang X A, Zhang J W, Zhang W F, Wang D, Bi Z, Bian X M, Hou X 2008 Thin Solid Films 516 3305
[6]	Presley R E, Munsee C L, Park C H, Hong D, Wager J F, Keszler D A 2004 J. Phys. D 37 2810
[7]	Chiang H Q, Wager J F, Hoffman R L, Jeong J, Keszler D A 2005 Appl. Phys. Lett. 86 013503
[8]	Zhang J Y, Deng T S, Shen X, Zhu K T, Zhang Q F, Wu J L 2009 Acta Phys. Sin. 58 4156(in Chinese)[张俊艳、邓天松、沈昕、朱孔涛、张琦锋、吴锦雷 2009 物理学报 58 4156]
[9]	Suresh A, Wellenius P, Dhawan A, Muth J 2007 Appl. Phys. Lett. 90 123512
[10]	Wang L, Yoon M H, Lu G, Yang Y, Facchetti A, Marks T J 2006 Nature Mater. 5 893
[11]	Wang K, Vygranenko Y, Chaji R, Nathan A 2009 J. Vac. Sci. Technol. B 27 612
[12]	Lavareda G, Carvalho C N, Fortunato E, Ramos A R, Alves E, Conde O, Amaral A 2006 J. Non-Cryst. Solids 352 2311
[13]	Vygranenko Y, Wang K, Nathan A 2007 Appl. Phys. Lett. 91 263508
[14]	Kim C S, Jo S J, Lee S W, Kim J W, Baik H K, Lee S J, Hwang D K, Im S 2006 Appl. Phys. Lett. 88 243515

Cited By

[1]	Son K S, Kim T S, Jung J S, Ryu M K, Park K B, Yoo B W, Park K C, Kwon J Y, Lee S Y, Kim J M 2009 Electrochemical and Solid-State Lett. 12 H26
[2]	Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488
[3]	Wu H Z, Liang J, Jin G F, LaoY F, Xu T N 2007 IEEE Trans. Electron Devices 54 2856
[4]	Zhu X M, Wu H Z, Wang S J, Zhang Y Y, Cai C F, Si J X, Yuan Z J, Du X Y, Dong S R 2009 J. Semicond. 30 033001
[5]	Zhang X A, Zhang J W, Zhang W F, Wang D, Bi Z, Bian X M, Hou X 2008 Thin Solid Films 516 3305
[6]	Presley R E, Munsee C L, Park C H, Hong D, Wager J F, Keszler D A 2004 J. Phys. D 37 2810
[7]	Chiang H Q, Wager J F, Hoffman R L, Jeong J, Keszler D A 2005 Appl. Phys. Lett. 86 013503
[8]	Zhang J Y, Deng T S, Shen X, Zhu K T, Zhang Q F, Wu J L 2009 Acta Phys. Sin. 58 4156(in Chinese)[张俊艳、邓天松、沈昕、朱孔涛、张琦锋、吴锦雷 2009 物理学报 58 4156]
[9]	Suresh A, Wellenius P, Dhawan A, Muth J 2007 Appl. Phys. Lett. 90 123512
[10]	Wang L, Yoon M H, Lu G, Yang Y, Facchetti A, Marks T J 2006 Nature Mater. 5 893
[11]	Wang K, Vygranenko Y, Chaji R, Nathan A 2009 J. Vac. Sci. Technol. B 27 612
[12]	Lavareda G, Carvalho C N, Fortunato E, Ramos A R, Alves E, Conde O, Amaral A 2006 J. Non-Cryst. Solids 352 2311
[13]	Vygranenko Y, Wang K, Nathan A 2007 Appl. Phys. Lett. 91 263508
[14]	Kim C S, Jo S J, Lee S W, Kim J W, Baik H K, Lee S J, Hwang D K, Im S 2006 Appl. Phys. Lett. 88 243515

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