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Our recent work on deposition and characterization of hydrogenated microcrystalline silicon (μ c-Si:H) thin films and silicon thin film solar cells prepared by RF-PECVD under high-pressure-depletion conditions is summarized in this paper. Several key issues are studied in detail: 1) process windows for device-quality μ c-Si:H thin films, 2) formation mechanism of amorphous silicon incubation layer and the effective methods to reduce the incubation layer thickness, 3) modification of crystalline fraction volume of intrinsic μ c-Si:H layers and its influence on the device performance of μ c-Si:H solar cells, 4) deposition of high conductive p-type μ c-Si:H window layers with high crystalline fraction volume, and the influence of p-layer on the device performance. After solving the above key issues, a high efficiency of 8.16% is obtained for μ c-Si:H sing-junction solar cell with intrinsic layer prepared by RF-PECVD under high-pressure-depletion conditions. When it is used as bottom cell in a-Si:H/μ c-Si:H tandem solar cell, the efficiency of tandem cell reaches 11.61%.
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Keywords:
- high-pressure RF-PECVD /
- hydrogenated microcrystalline silicon /
- incubation layer /
- hydrogen dilution profiling
[1] Shan A V, Schade H, Vanecek M, Meier J, Vallat-Sauvain E,Wyrsch N, Kroll U, Droz C, Bailat J 2004 Prog. Photovolt. Res.Appl. 12 113
[2] Mai Y, Klein S, Geng X, Finger F 2004 Appl. Phys. Lett. 85 2839
[3] Li H, Franken R H, Stolk R L, van derWerf C H M, Schuttauf J A,Rath J K, Schropp R E I 2007 Mater. Res. Soc. Symp. Proc. 989A18.3
[4] Nasuno Y, Kondo M, Matsuda A 2001 Jpn. J. Appl. Phys. 40 L303
[5] Sansonnens L, Schmidt H, Howling A, Hollenstein Ch, Ellert Ch,Buechel A 2006 J. Vac. Sci. Technol. A 24 1425
[6] Hrunski H, Scheib M, Mertz M, Schroeder B 2009 Thin SolidFilms 517 3370
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[8] Kluth O, Rech B, Houben L, Wieder S, Schöpe G, Beneking C,Wagner H, Löffl A, Schock H W 1999 Thin Solid Films 351 247
[9] Chen X L, Xu B H, Xue J M, Zhao Y, Wei C C, Sun J, Wang Y,Zhang X D, Geng X H 2007 Thin Solid Films 515 3753
[10] Hou G F, Xue J M, Yuan Y J, Sun J, Zhao Y, Geng X H 2007Science in China Ser. G: Phys. Mech. & Astron. 50 731
[11] Hou G F, Xue J M, Sun J, Guo Q C, Zhang D K, Ren H Z, ZhaoY, Geng X H, Li Y G 2007 Aata Phys. Sin. 56 1177 (in Chinese) [侯国付, 薛俊明, 孙建, 郭群超, 张德坤, 任慧志, 赵颖,耿新华, 李乙钢 2007 物理学报 56 1177]
[12] Hou G F, Guo Q C, Wang Y, Xue J M, Ren H Z, Sun J, Zhang XD, Zhao Y, Geng X H, Li Y G 2005 J. Synthetic Crystals 34 999(in Chinese) [侯国付, 郭群超, 王岩, 薛俊明, 任慧志, 孙建, 张晓丹,赵颖, 耿新华, 李乙钢 2005 人工晶体学报 34 999]
[13] Hou G F, Xue J M, Guo Q C, Sun J, Zhao Y, Geng X H, Li Y G2007 Chin. Phys. 16 553
[14] Han X Y, Hou G F, Li G J, Zhang X D, Yuan Y J, Zhang D K,Chen X L, Wei C C, Sun J, Zhao Y, Geng X H 2008 Acta Phys.Sin. 57 5284 (in Chinese) [韩晓艳, 侯国付, 李贵君, 张晓丹,袁育杰, 张德坤, 陈新亮, 魏长春, 孙健, 耿新华 2008 物理学报 57 5284]
[15] Hou G F, Xue J M, Yuan Y J, Zhang D K, Sun J, Zhang J J, ZhaoY, Geng X H 2007 J. Synthetic Crystals 36 85 (in Chinese) [侯国付, 薛俊明, 袁育杰, 张德坤, 孙 建, 张建军, 赵颖,耿新华 2007 人工晶体学报 36 85]
[16] Yan B, Yue G, Yang J, Yang J, Guha S, Williamson D L, Jiang C2004 Appl. Phys. Lett. 85 1955
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[1] Shan A V, Schade H, Vanecek M, Meier J, Vallat-Sauvain E,Wyrsch N, Kroll U, Droz C, Bailat J 2004 Prog. Photovolt. Res.Appl. 12 113
[2] Mai Y, Klein S, Geng X, Finger F 2004 Appl. Phys. Lett. 85 2839
[3] Li H, Franken R H, Stolk R L, van derWerf C H M, Schuttauf J A,Rath J K, Schropp R E I 2007 Mater. Res. Soc. Symp. Proc. 989A18.3
[4] Nasuno Y, Kondo M, Matsuda A 2001 Jpn. J. Appl. Phys. 40 L303
[5] Sansonnens L, Schmidt H, Howling A, Hollenstein Ch, Ellert Ch,Buechel A 2006 J. Vac. Sci. Technol. A 24 1425
[6] Hrunski H, Scheib M, Mertz M, Schroeder B 2009 Thin SolidFilms 517 3370
[7] Guo L H, Kondo M, Fukawa M, Saitoh K, Matsuda A, 1998 Jpn.J. Appl. Phys. 37 L1116
[8] Kluth O, Rech B, Houben L, Wieder S, Schöpe G, Beneking C,Wagner H, Löffl A, Schock H W 1999 Thin Solid Films 351 247
[9] Chen X L, Xu B H, Xue J M, Zhao Y, Wei C C, Sun J, Wang Y,Zhang X D, Geng X H 2007 Thin Solid Films 515 3753
[10] Hou G F, Xue J M, Yuan Y J, Sun J, Zhao Y, Geng X H 2007Science in China Ser. G: Phys. Mech. & Astron. 50 731
[11] Hou G F, Xue J M, Sun J, Guo Q C, Zhang D K, Ren H Z, ZhaoY, Geng X H, Li Y G 2007 Aata Phys. Sin. 56 1177 (in Chinese) [侯国付, 薛俊明, 孙建, 郭群超, 张德坤, 任慧志, 赵颖,耿新华, 李乙钢 2007 物理学报 56 1177]
[12] Hou G F, Guo Q C, Wang Y, Xue J M, Ren H Z, Sun J, Zhang XD, Zhao Y, Geng X H, Li Y G 2005 J. Synthetic Crystals 34 999(in Chinese) [侯国付, 郭群超, 王岩, 薛俊明, 任慧志, 孙建, 张晓丹,赵颖, 耿新华, 李乙钢 2005 人工晶体学报 34 999]
[13] Hou G F, Xue J M, Guo Q C, Sun J, Zhao Y, Geng X H, Li Y G2007 Chin. Phys. 16 553
[14] Han X Y, Hou G F, Li G J, Zhang X D, Yuan Y J, Zhang D K,Chen X L, Wei C C, Sun J, Zhao Y, Geng X H 2008 Acta Phys.Sin. 57 5284 (in Chinese) [韩晓艳, 侯国付, 李贵君, 张晓丹,袁育杰, 张德坤, 陈新亮, 魏长春, 孙健, 耿新华 2008 物理学报 57 5284]
[15] Hou G F, Xue J M, Yuan Y J, Zhang D K, Sun J, Zhang J J, ZhaoY, Geng X H 2007 J. Synthetic Crystals 36 85 (in Chinese) [侯国付, 薛俊明, 袁育杰, 张德坤, 孙 建, 张建军, 赵颖,耿新华 2007 人工晶体学报 36 85]
[16] Yan B, Yue G, Yang J, Yang J, Guha S, Williamson D L, Jiang C2004 Appl. Phys. Lett. 85 1955
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