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Quantitative analysis on the influences of the precursor and annealing temperature on Nd2O3 film composition

Zhang Xu-Jie Liu Hong-Xia Fan Xiao-Jiao Fan Ji-Bin

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Quantitative analysis on the influences of the precursor and annealing temperature on Nd2O3 film composition

Zhang Xu-Jie, Liu Hong-Xia, Fan Xiao-Jiao, Fan Ji-Bin
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  • In this paper, ultra-thin Nd2O3 dielectric films are deposited on p-type silicon substrates by advanced atomic layer deposition method. Nd (thd)3 and O3 are used as the reaction precursors separately. The as-grown samples are annealed in N2 atmosphere in a temperature range of 700900 ℃. The samples are investigated at room temperature by X-ray photoelectron spectroscopy and the changes of the film composition at different annealing temperatures are discussed in detail. For a higher precursor temperature of 185 ℃ in the deposition process, the ratio of oxygen to neodymium atoms for the as-grown film is 1.82, which is close to the stoichiometry. Dielectric constant increases from 6.85 to 10.32.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076097, 60936005), the Cultivation Fund of the Key Scientific and Technical Innovation Project of Ministry of Education of China (Grant No. 708083) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 20110203110012).
    [1]

    Duan T L, Yu H Y, Wu L, Wang Z R, Foo Y L, Pan J S 2011 Appl. Phys. Lett. 99 012902

    [2]

    Wang H, Wang Y, Feng J, Ye C, Wang B Y, Wang H B, Li Q, Jiang Y, Huang A P, Xiao Z S 2008 Appl. Phys. A Mat. Sci. Process 93 681

    [3]

    Huang L, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 137303 (in Chinese) [黄力, 黄安平, 郑晓虎, 肖志松, 王玫 2012 物理学报 61 137303]

    [4]

    Pavunny S P, Thomas R, Kumar A, Murari N M, Katiyar R S 2012 J. Appl. Phys. 111 102811

    [5]

    Kosola A, Paivasaari J, Putkonen M, Niinisto L 2005 Thin Solid Films 479 152

    [6]

    Busani T, Devine R A B, Gonon P 2006 Electrochem. Soc. Trans. 1 331

    [7]

    Liu H X, Kuang Q W, Wang Z L, Gao B, Wang S L, Hao Y 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai, China, November 1-4, 2010, p982

    [8]

    Zhao C, Zhao C Z, Werner M, Taylor S, Chalker P R 2012 International Scholarly Research Network Nanotechnology 2012 Article ID 689023

    [9]

    Wang J Q, Wu W H, Feng D M 1992 Electron Spectroscopy: An Introduction (Beijing: National Defense Industry Press) p542 (in Chinese) [王建祺, 吴文辉, 冯大明 1992 电子能谱学引论 (北京: 国防工业出版社) 第542页]

    [10]

    Wang X M, Zeng X Q, Wu G S, Yao S S, Li L B 2007 Appl. Surf. Sci. 253 9017

    [11]

    Ogawa A, Iwamoto K, Ota H, Morita Y, Ikeda M, Nabatame T, Toriumi A 2007 Microelectron. Eng. 84 1861

    [12]

    Renault O, Samour D, Damlencourt J F, Blin D, Martin F, Marthon S, Barrett N T, Besson P 2002 Appl. Phys. Lett. 81 3627

  • [1]

    Duan T L, Yu H Y, Wu L, Wang Z R, Foo Y L, Pan J S 2011 Appl. Phys. Lett. 99 012902

    [2]

    Wang H, Wang Y, Feng J, Ye C, Wang B Y, Wang H B, Li Q, Jiang Y, Huang A P, Xiao Z S 2008 Appl. Phys. A Mat. Sci. Process 93 681

    [3]

    Huang L, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 137303 (in Chinese) [黄力, 黄安平, 郑晓虎, 肖志松, 王玫 2012 物理学报 61 137303]

    [4]

    Pavunny S P, Thomas R, Kumar A, Murari N M, Katiyar R S 2012 J. Appl. Phys. 111 102811

    [5]

    Kosola A, Paivasaari J, Putkonen M, Niinisto L 2005 Thin Solid Films 479 152

    [6]

    Busani T, Devine R A B, Gonon P 2006 Electrochem. Soc. Trans. 1 331

    [7]

    Liu H X, Kuang Q W, Wang Z L, Gao B, Wang S L, Hao Y 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai, China, November 1-4, 2010, p982

    [8]

    Zhao C, Zhao C Z, Werner M, Taylor S, Chalker P R 2012 International Scholarly Research Network Nanotechnology 2012 Article ID 689023

    [9]

    Wang J Q, Wu W H, Feng D M 1992 Electron Spectroscopy: An Introduction (Beijing: National Defense Industry Press) p542 (in Chinese) [王建祺, 吴文辉, 冯大明 1992 电子能谱学引论 (北京: 国防工业出版社) 第542页]

    [10]

    Wang X M, Zeng X Q, Wu G S, Yao S S, Li L B 2007 Appl. Surf. Sci. 253 9017

    [11]

    Ogawa A, Iwamoto K, Ota H, Morita Y, Ikeda M, Nabatame T, Toriumi A 2007 Microelectron. Eng. 84 1861

    [12]

    Renault O, Samour D, Damlencourt J F, Blin D, Martin F, Marthon S, Barrett N T, Besson P 2002 Appl. Phys. Lett. 81 3627

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Publishing process
  • Received Date:  18 August 2012
  • Accepted Date:  08 September 2012
  • Published Online:  05 February 2013

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