Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor

Zhang Jin-Xin Guo Hong-Xia Guo Qi Wen Lin Cui Jiang-Wei Xi Shan-Bin Wang Xin Deng Wei

Citation:

3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor

Zhang Jin-Xin, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Xi Shan-Bin, Wang Xin, Deng Wei
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  5654
  • PDF Downloads:  671
  • Cited By: 0
Publishing process
  • Received Date:  17 August 2012
  • Accepted Date:  20 September 2012
  • Published Online:  05 February 2013

/

返回文章
返回