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Accumulation MOS capacitor is more linear than inversion MOS capacitor and is almost independent of the operation frequency. In this paper, we present first the formation mechanism of the plateau, observed in the C-V characteristic of the strained-Si NMOS capacitor, and then a physical model for strained-Si NMOS capacitor in accumulation region. The results from the model show to be in excellent agreement with the experimental data. The proposed model can provide valuable reference for the strained-Si device design, and is has been implemented in the software for extracting the parameter of strained-Si MOSFET.
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Keywords:
- strained-Si NMOS /
- accumulation capacitor /
- plateau /
- charge distribution
[1] Wang G Y, Zhang H M, Wang X Y, Wu T F, Wang B 2011 Acta Phys. Sin. 60 77106 (in Chinese) [王冠宇, 张鹤鸣, 王晓燕, 吴铁峰, 王斌 2011 物理学报 60 77106]
[2] Li B, Liu H X , Yuan B, Li J, Lu F M 2011 Acta Phys. Sin. 60 017202 (in Chinese) [李斌, 刘红霞, 袁博, 李劲, 卢凤铭 2011 物理学报 60 017202 ]
[3] Hu H Y, Zhang H M, Dai X Y, L Y, Shu B, Wang W, Jiang T, Wang X Y 2004 Acta Phys. Sin. 53 4314 (in Chinese) [胡辉勇, 张鹤鸣, 戴显英, 吕懿, 舒斌, 王伟, 姜涛, 王喜媛 2004 物理学报 53 4314]
[4] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys.Sin. 58 4648 (in Chinese) [张志峰, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 物理学报 58 4648]
[5] Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[6] Haizhou Y, Hobart K D, Peterson R L, Kub F J, Sturm J C 2005 IEEE Trans. on Electron Devices 52 2207
[7] Lauer I, Langdo T A, Cheng Z Y, Fiorenza J G, Brainthwaite G, Currie M T, Leitz C W, Lochtefeld A, Badawi H, Bulsara M T, Somerville M, Antoniadis D A 2004 IEEE Electron Device Letters 25 83
[8] Bindu B, Nandita D G, Amitava D G 2006 IEEE Trans. on Electron Devices 53 1411
[9] Wei J Y, Maikap S, Lee M H, Lee C C, Liu C W 2006 Solid-State Electronics 50 109
[10] Liao J H, Canonico M, Robinson M, Schroder D K 2006ECS Trans. 3 1211
[11] Bera L K, Mathew S, Balasubramanian N, Braithwaite G, Currie M T, Singaporewala F 2004 Appl. Surf. Sci. 224 278
[12] Chandrasekaran K, Xin Z, Chiah S B, See G H, Bera L K, Balasubramanian N, Rustagi S C 2006 IEEE Electron Device Letters 27 62
[13] Kelaidis N, Skarlatos D, Tsamis C 2008 Phys. Stat. Sol. C 5 3647
[14] Otin A, Celma S, Aldea C 2004 Solid State Electronics 48 773
[15] Yao B, Fang Z B, Zhu Y Y, Li T, He G 2012 Appl. Phys. Lett. 100 222903
[16] Yoo S S, Choi Y C, Song H J, Park S C, Park J H, Yoo H J 2011 IEEE Trans. on Microwave Theory and Techniques 59 375
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[1] Wang G Y, Zhang H M, Wang X Y, Wu T F, Wang B 2011 Acta Phys. Sin. 60 77106 (in Chinese) [王冠宇, 张鹤鸣, 王晓燕, 吴铁峰, 王斌 2011 物理学报 60 77106]
[2] Li B, Liu H X , Yuan B, Li J, Lu F M 2011 Acta Phys. Sin. 60 017202 (in Chinese) [李斌, 刘红霞, 袁博, 李劲, 卢凤铭 2011 物理学报 60 017202 ]
[3] Hu H Y, Zhang H M, Dai X Y, L Y, Shu B, Wang W, Jiang T, Wang X Y 2004 Acta Phys. Sin. 53 4314 (in Chinese) [胡辉勇, 张鹤鸣, 戴显英, 吕懿, 舒斌, 王伟, 姜涛, 王喜媛 2004 物理学报 53 4314]
[4] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys.Sin. 58 4648 (in Chinese) [张志峰, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 物理学报 58 4648]
[5] Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[6] Haizhou Y, Hobart K D, Peterson R L, Kub F J, Sturm J C 2005 IEEE Trans. on Electron Devices 52 2207
[7] Lauer I, Langdo T A, Cheng Z Y, Fiorenza J G, Brainthwaite G, Currie M T, Leitz C W, Lochtefeld A, Badawi H, Bulsara M T, Somerville M, Antoniadis D A 2004 IEEE Electron Device Letters 25 83
[8] Bindu B, Nandita D G, Amitava D G 2006 IEEE Trans. on Electron Devices 53 1411
[9] Wei J Y, Maikap S, Lee M H, Lee C C, Liu C W 2006 Solid-State Electronics 50 109
[10] Liao J H, Canonico M, Robinson M, Schroder D K 2006ECS Trans. 3 1211
[11] Bera L K, Mathew S, Balasubramanian N, Braithwaite G, Currie M T, Singaporewala F 2004 Appl. Surf. Sci. 224 278
[12] Chandrasekaran K, Xin Z, Chiah S B, See G H, Bera L K, Balasubramanian N, Rustagi S C 2006 IEEE Electron Device Letters 27 62
[13] Kelaidis N, Skarlatos D, Tsamis C 2008 Phys. Stat. Sol. C 5 3647
[14] Otin A, Celma S, Aldea C 2004 Solid State Electronics 48 773
[15] Yao B, Fang Z B, Zhu Y Y, Li T, He G 2012 Appl. Phys. Lett. 100 222903
[16] Yoo S S, Choi Y C, Song H J, Park S C, Park J H, Yoo H J 2011 IEEE Trans. on Microwave Theory and Techniques 59 375
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