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Dense Si nanostructures embedded in silicon nitride prepared by plasma-enhanced chemical vapor deposition (PECVD) was used as luminescence active layer to fabricate light-emitting diodes based on p-Si/SiN-based emitter/AZO structure. Visible electroluminescence from the device was observed at room temperature. It is found that the electroluminescence intensity of the device can be further enhanced significantly by inserting an ultrathin nanocrystalline Si layer between the p-Si substrate and SiN-based emitter as a hole barrier layer. Moreover, the electroluminescence efficiency is increased by more than 80% as compared to the decice without the nc-Si barrier layer.
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Keywords:
- nc-Si /
- silicon nitride /
- electroluminescence
[1] Chen K, Huang X, Xu J, Feng D 1992 Appl. Phys. Lett. 61 2069
[2] Qin G G, Ma S Y, Ma Z C, Zong W H, You L P 1998 Solid State Communications 106 329
[3] Pavesi L, Dal Negro L, Mazzoleni C, Franzò G, Priolo F 2000 Nature 408 440
[4] Ma L B 2006 Appl. Phys. Lett. 88 093102
[5] Hao H L, Wu L K, Shen W Z 2008 Appl. Phys. Lett. 92 121922
[6] Wang M, Li D, Yuan Z, Yang D, Que D 2007 Appl. Phys. Lett. 90 131903
[7] Zhou J, Chen G R, Liu Y, Xu J, Wang T, Wan N, Ma Z Y, Li W, Song C, Chen K J 2009 Opt. Express. 17 156
[8] Huang R, Dong H, Wang D, Chen K, Ding H, Wang X, Li W, Xu J, Ma Z 2008 Appl. Phys. Lett. 92 181106
[9] Huang R, Song J, Wang X, Guo Y, Song C, Zheng Z, Wu X, Chu P K 2012 Opt. Lett. 37 692
[10] Wang X, Huang R, Song C, Guo Y, Song J 2013 Appl. Phys. Lett. 102 081114
[11] Huang R, Wang D Q, Song J, Ding H L, Wang X, Guo Y Q, Chen K J, Xu J, Li W, Ma Z Y 2010 Acta Phys. Sin. 59 5827 ((in Chinese) [黄锐, 王旦清, 宋捷, 丁宏林, 王祥, 郭艳青, 陈坤基, 徐骏, 李伟, 马忠元 2010 物理学报 59 5827]
[12] Ding W G, Sang Y G, Yu W, Yang Y B, Teng X Y, Fu G S 2012 Acta Phys. Sin. 61 247304 (in Chinese) [丁文革, 桑云刚, 于威, 杨彦斌, 滕晓云, 傅广生 2012 物理学报 61 247304]
[13] Liu C W 2000 Appl. Phys. Lett. 77 4347
[14] Huang R, Lin Z W, Lin Z X, Song C, Wang X, Guo Y Q, Song J 2014 IEEE J Sel. Topics Quantum. Electron. 20 8200306
[15] Wang F, Li D, Jin L 2013 Appl. Phys. Lett. 102 081108
[16] Mu W, Zhang P, Xu J, Sun S, Xu J, Li W, Chen K 2014 IEEE J. Sel. Topics Quantum. Electron. 20 8200106
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[1] Chen K, Huang X, Xu J, Feng D 1992 Appl. Phys. Lett. 61 2069
[2] Qin G G, Ma S Y, Ma Z C, Zong W H, You L P 1998 Solid State Communications 106 329
[3] Pavesi L, Dal Negro L, Mazzoleni C, Franzò G, Priolo F 2000 Nature 408 440
[4] Ma L B 2006 Appl. Phys. Lett. 88 093102
[5] Hao H L, Wu L K, Shen W Z 2008 Appl. Phys. Lett. 92 121922
[6] Wang M, Li D, Yuan Z, Yang D, Que D 2007 Appl. Phys. Lett. 90 131903
[7] Zhou J, Chen G R, Liu Y, Xu J, Wang T, Wan N, Ma Z Y, Li W, Song C, Chen K J 2009 Opt. Express. 17 156
[8] Huang R, Dong H, Wang D, Chen K, Ding H, Wang X, Li W, Xu J, Ma Z 2008 Appl. Phys. Lett. 92 181106
[9] Huang R, Song J, Wang X, Guo Y, Song C, Zheng Z, Wu X, Chu P K 2012 Opt. Lett. 37 692
[10] Wang X, Huang R, Song C, Guo Y, Song J 2013 Appl. Phys. Lett. 102 081114
[11] Huang R, Wang D Q, Song J, Ding H L, Wang X, Guo Y Q, Chen K J, Xu J, Li W, Ma Z Y 2010 Acta Phys. Sin. 59 5827 ((in Chinese) [黄锐, 王旦清, 宋捷, 丁宏林, 王祥, 郭艳青, 陈坤基, 徐骏, 李伟, 马忠元 2010 物理学报 59 5827]
[12] Ding W G, Sang Y G, Yu W, Yang Y B, Teng X Y, Fu G S 2012 Acta Phys. Sin. 61 247304 (in Chinese) [丁文革, 桑云刚, 于威, 杨彦斌, 滕晓云, 傅广生 2012 物理学报 61 247304]
[13] Liu C W 2000 Appl. Phys. Lett. 77 4347
[14] Huang R, Lin Z W, Lin Z X, Song C, Wang X, Guo Y Q, Song J 2014 IEEE J Sel. Topics Quantum. Electron. 20 8200306
[15] Wang F, Li D, Jin L 2013 Appl. Phys. Lett. 102 081108
[16] Mu W, Zhang P, Xu J, Sun S, Xu J, Li W, Chen K 2014 IEEE J. Sel. Topics Quantum. Electron. 20 8200106
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