Quantum confinement effect on electronic and optical properties of SnS

Wu Qiong; Liu Jun; Dong Qian-Min; Liu Yang; Liang Pei; Shu Hai-Bo

doi:10.7498/aps.63.067101

Abstract

The structural stabilities, electronic and optical properties of SnS bulk, monolayer, and multilayers are systematically studied by using the first-principles calculations within the density-functional theory. Our calculated results indicate that monolayer SnS can be exfoliated from its bulk, and the process is similar to the fabrication of graphene. With the reduction of layer number, the structural stabilities of SnS nanostructures become weak and their band gaps increase due to the quantum confinement effect and the layer interactions. Therefore, the optical properties of SnS can be controlled by adjusting the layer number due to the fact that the optical properties of materials depend on their electronic structures. The main optical absorption peaks of SnS bulk and nanostructures originate from the electron transitions among the orbitals of Sn-5s, 5p and S-2p. Moreover, the optical absorption peaks of SnS show obvious blue shift when SnS structure transforms from its bulk to monolayer. The present study will contribute to the application of SnS materials in the solar cells.

Keywords:

Authors and contacts

1.
College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61006051, 61177050), the College students in Zhejiang province science and technology innovation activities plan, China (Grant No. 2013R409016), and the Science and Technology Department of Zhejiang Province Public Technology Research Project of China (Grant No. 2013C31068).

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Cited By

[1]	Jiang T, Cheng X A, Jiang H M, Lu Q S 2011 Acta Phys. Sin. 60 107305 (in Chinese) [江天, 程湘爱, 江厚满, 陆启生 2011 物理学报 60 107305]
[2]	Zhou C L, Wang W J, Zhao L, Li H L, Diao H W, Cao X N 2010 Acta Phys. Sin. 59 5777 (in Chinese) [周春兰, 王文静, 赵雷, 李海玲, 刁宏伟, 曹晓宁 2010 物理学报 59 5777]
[3]	Tian X N, Zhang X R, Zhang H J, Han D J, Batignani G 2004 Acta Photon. Sin. 33 838 (in Chinese) [田晓娜, 张秀荣, 张海君, 韩德俊, Batignani G 2004 光子学报 33 838]
[4]	Xu Z J, Li K Y, Sun Z P 2013 Acta Phys. Sin. 62 066801 (in Chinese) [薛振杰, 李葵英, 孙振平 2013 物理学报 62 066801]
[5]	Mitzi D B, Yuan M, Liu W, Kellock A J, Chey S J, Gignac L, Schrott A G 2009 Thin Solid Films 517 2158
[6]	Wada T, Hashimoto Y, Nishiwaki S, Satoh T, Hayashi S, Negami T, Miyake H 2001 Sol. Energ. Mat. Sol. C 67 305
[7]	Hickey S G, Waurisch C, Rellinghaus B, Eychmuller A 2008 J. Am. Chem. Soc. 130 14978
[8]	Antunez P D, Buckley J J, Brutchey R L 2011 Nanoscale 3 2399
[9]	Jayalakshmi M, Mohan R M, Choudary B M 2004 Electrochem. Commun. 6 1119
[10]	Zhang Y J, Lu J, Shen S L, Xu H R, Wang Q B 2011 Chem. Commun. 47 5226
[11]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotechnol. 6 147
[12]	Song X F, Hu J L, Zeng H B 2013 J. Mater. Chem. C 1 2952
[13]	Ataca C, Ciraci S 2011 J. Phys. Chem. C 115 13303
[14]	He M C, Zhao J 2013 Chin. Phys. B 22 016802
[15]	Deng Z T, Han D R, Liu Y 2011 Nanoscale 3 4346
[16]	Deng Z T, Cao D, He J, Lin S, Lindsay S M, Liu Y 2012 ACS Nano 6 6197
[17]	Vidal J, Lany S, Avezac M, Zunger A, Zakutayev A, Francis J, Tate J 2012 Appl. Phys. Lett. 100 032104
[18]	Parker D, Singh D J 2010 J. Appl. Phys. 108 083712
[19]	Tritsaris G A, Malone B D, Kaxiras E 2013 J. Appl. Phys. 113 233507
[20]	Kresse G, Furthmller J 1996 Comp. Mater. Sci. 6 15
[21]	Lou J Y, Jiang X S, Xu T J, Liang D L, Jiao F J, Gao L 2012 Rare Metals 31 507
[22]	Perdew J P, Burke K, Wang Y 1996 Phys. Rev. B 54 16533
[23]	Kohn W, Sham L J 1965 Phys. Rev. 140 A1133
[24]	Monkhorst H J, Pack J D 1976 Phys. Rev. B 13 5188
[25]	Björkman T, Gulans A, Krasheninnikov A V, Nieminen R M 2012 Phys. Rev. Lett. 108 235502
[26]	Nicolosi V, Chhowalla M, Kanatzidis M G, Strano M S, Coleman J N 2013 Science 340 1226419
[27]	Rajagopalan M, Kalpana G, Priyamvadha V 2006 Bull. Mater. Sci. 29 25
[28]	Shu H B, Cao D, Liang P, Jin S Z, Chen X S, Lu W 2012 J. Phys. Chem. C 116 17928
[29]	Ng M F, Sullivan M B, Tong S W, Wu P 2011 Nano Lett. 11 4794
[30]	Zhao X Y, Wei C M, Yang L, Chou M Y 2004 Phys. Rev. Lett. 92 236805
[31]	Liu Y, Shu H B, Liang P, Cao D, Chen X S, Lu W 2013 J. Appl. Phys. 114 094308
[32]	Zhang X J, Gao P, Liu Q J 2010 Acta Phys. Sin. 59 4930 (in Chinese) [张学军, 高攀, 柳清菊 2010 物理学报 59 4930]
[33]	Guan L, Liu B T, Li X, Zhao Q X, Wang Y L, Guo J X, Wang S B 2008 Acta Phys. Sin. 57 482 (in Chinese) [关丽, 刘保亭, 李旭, 赵庆勋, 王英龙, 郭建新, 王书彪 2008 物理学报 57 482]

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Vol. 63, Issue 6 - 2014-03-20

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