STUDY ON HIGH ELECTRIC FIELD ANNEALING EFFECT IN THIN GATE OXIDE OF MOS STRUCTURE
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin.  2001, Vol. 50 Issue (8): 1585-1589    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
STUDY ON HIGH ELECTRIC FIELD ANNEALING EFFECT IN THIN GATE OXIDE OF MOS STRUCTURE
ZHANG JIN-CHENG, HAO YUE, ZHU ZHI-WEI
西安电子科技大学微电子研究所,西安710071
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn