EXTRACTION OF POLARIZATION-INDUCED CHARGE DENSITY INMODULATION-DOPED Al<sub>x</sub>Ga<sub>1-x</sub>N/GaN HETEROSTRUCTURETHROUGH THE SIMULATION OF THE SCHOTTKY CAPACITANCE-VOLTAGE CHARACTERISTICS
Acta Physica Sinica
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Acta Phys. Sin.  2001, Vol. 50 Issue (9): 1774-1778    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
EXTRACTION OF POLARIZATION-INDUCED CHARGE DENSITY INMODULATION-DOPED AlxGa1-xN/GaN HETEROSTRUCTURETHROUGH THE SIMULATION OF THE SCHOTTKY CAPACITANCE-VOLTAGE CHARACTERISTICS
ZHOU YU-GANG, SHEN BO, LIU JIE, ZHOU HUI-MEI, YU HUI-QIANG, ZHANG RONG, SHI YI, ZHENG YOU-DOU
南京大学物理系,南京210093
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