Study on the corner effect in new grooved-gate nMOSFET
Acta Physica Sinica
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Acta Phys. Sin.  2004, Vol. 53 Issue (9): 2905-2909    
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Study on the corner effect in new grooved-gate nMOSFET
Tong Jian-Nong1, Shen Xu-Bang1, Zou Xue-Cheng2
(1)华中科技大学图像所IC设计中心,武汉 430073; (2)华中科技大学图像所IC设计中心,武汉 430073;华中科技大学电子科学与技术系,武汉 430073
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