The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress
Acta Physica Sinica
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Acta Phys. Sin.  2006, Vol. 55 Issue (11): 6118-6122    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress
Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju
西安电子科技大学微电子研究所,宽禁带半导体材料与器件教育部重点实验室,西安 710071
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