Effects of low-temperature annealing on oxygen precipitate nucleation in heavily arsenic-doped Czochralski silicon
Acta Physica Sinica
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Acta Phys. Sin.  2008, Vol. 57 Issue (11): 7108-7113    
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Effects of low-temperature annealing on oxygen precipitate nucleation in heavily arsenic-doped Czochralski silicon
Gong Long-Fei1, Xi Guang-Ping2, Ma Xiang-Yang2, Zeng Yu-Heng2, Yang De-Ren2, Tian Da-Xi3
(1)宁波立立电子股份有限公司,宁波 315800; (2)浙江大学硅材料国家重点实验室,杭州 310027; (3)浙江大学硅材料国家重点实验室,杭州 310027;宁波立立电子股份有限公司,宁波 315800
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