Study of conductive property for a N-VDMOS interface trap under X-ray radiation
Acta Physica Sinica
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Acta Phys. Sin.  2008, Vol. 57 Issue (3): 1872-1877    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Study of conductive property for a N-VDMOS interface trap under X-ray radiation
Yang Mo-Hua1, Sun Guang-Ai2, Xu Shi-Liu3, Zhang Zheng-Fan3, Liu Yu-Kui3, Zhong Yi3, Hu Gang-Yi4, He Kai-Quan4
(1)电子科技大学微电子与固体电子学院,成都 610054; (2)电子科技大学微电子与固体电子学院,成都 610054;模拟集成电路国家重点实验室,重庆 400060; (3)模拟集成电路国家重点实验室,重庆 400060; (4)中国电子科技集团公司第二十四研究所,重庆 400060
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