Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs
Acta Physica Sinica
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Acta Phys. Sin.  2009, Vol. 58 Issue (1): 511-517    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs
Gu Wen-Ping, Hao Yue, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua
西安电子科技大学微电子学院,西安 710071;宽禁带半导体材料与器件教育部重点实验室,西安 710071
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