Temperature characteristics of AlGaN/GaN MOS-HEMT with Al<sub>2</sub>O<sub>3</sub> gate dielectric
Acta Physica Sinica
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Acta Phys. Sin.  2009, Vol. 58 Issue (1): 536-540    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Temperature characteristics of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric
Liu Lin-Jie, Yue Yuan-Zheng, Zhang Jin-Cheng, Ma Xiao-Hua, Dong Zuo-Dian, Hao Yue
西安电子科技大学,宽禁带半导体材料与器件重点实验室,西安 710071
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