Stability of the intrinsic defects in unintentionally doped 4H-SiC epitaxial layer
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin.  2010, Vol. 59 Issue (5): 3542-3546    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Stability of the intrinsic defects in unintentionally doped 4H-SiC epitaxial layer
Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men, Wang Yue-Hu, Guo Hui
西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn