Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (1): 017205    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors
Mao Wei1, Hao Yue1, Zhang Jin-Cheng1, Liu Hong-Xia1, Wang Chong1, Zhang Jin-Feng1, Yang Lin-An1, Xu Sheng-Rui1, Bi Zhi-Wei1, Zhou Zhou1, Yang Ling1, Wang Hao1, Yang Cui2, Ma Xiao-Hua2
(1)School of Microelectronics, Xidian University, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China; (2)School of Technical Physics, Xidian University, Xi'an 710071, China
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