Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer
Wang Chong1 , Yang Yu1 , Yang Rui-Dong1 , Li Liang1 , Wei Dong1 , Jin Ying-Xia1 , Bao Ji-Ming2
1. Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091;
Abstract The Si+ self-ion-implanted and annealing experiments are conducted on the Si film based on the silicon-on-insulator wafers. The photoluminescence (PL) spectroscopy is used to investigate the luminescence properties of these Si film samples. Plentiful optical structures are observed in the PL spectra, including the D1 , D2 , D3 , X, and the sharp W lines. By comparing the normalized PL intensities recorded by the same spectral experiments, we obtain the optimum self-ion-implanted and thermal annealing parameters. In addition, the defect origins and optical properties of the series of the D peaks and W line are well discussed.
Key words ：
SOI structure
self-ion-implantation
W line emissionnear-infrared light emission device
Received: 2010-10-23
Published: 2011-10-15
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