Effect of doping concentration in p<sup>+</sup> deep well on charge sharing in 90nm CMOS technology
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (4): 046106    
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Effect of doping concentration in p+ deep well on charge sharing in 90nm CMOS technology
Liu Fan-Yu, Liu Heng-Zhu, Liu Bi-Wei, Liang Bin, Chen Jian-Jun
Computer School, National University of Defense Technology, Changsha 410073,China
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