The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (4): 047101    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors
Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke
Key Laboratory of Microelectronics Device & Integrated Technology, Institute of microelectronicsof Chinese Academy of Sciences, Beijing 100029, China
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