An model of tunneling gate current for uniaxially strained Si nMOSFET
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (9): 097302    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
An model of tunneling gate current for uniaxially strained Si nMOSFET
Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong
Microelectronics Insititute, Xidian University, key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071, Chnia
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