Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (10): 106103     doi:10.7498/aps.61.106103
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Archive| Adv Search  |   
Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory
Li Ming1 2 3, Yu Xue-Feng1 2, Xue Yao-Guo1 2, Lu Jian1 2 3, Cui Jiang-Wei1 2 3, Gao Bo1 2 3
1. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
2. Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;
3. Graduate University of Chinese Academy of Sciences, Beijing 100049, China
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