Influences of dislocation distribution on the resistive switching effect of Ag-SiO<sub>2</sub> thin films
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin  2012, Vol. 61 Issue (10): 107703     doi:10.7498/aps.61.107703
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Influences of dislocation distribution on the resistive switching effect of Ag-SiO2 thin films
Zhang Pei-Jian, Meng Yang, Liu Zi-Yu, Pan Xin-Yu, Liang Xue-Jin, Chen Dong-Min, Zhao Hong-Wu
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn