Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p<sup>+</sup> epitaxial wafer
Acta Physica Sinica
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Acta Phys. Sin.  2012, Vol. 61 Issue (23): 236102     doi:10.7498/aps.61.236102
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Archive| Adv Search  |   
Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer
Ji Chuan1, Xu Jin1 2
1. College of Materials, Xiamen University, Xiamen 361005, China;
2. Fujian Provincial Key Laboratory of Fire Retardant Materials, Xiamen 361005, China
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