Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy
Acta Physica Sinica
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Acta Phys. Sin.  2012, Vol. 61 Issue (23): 237804     doi:10.7498/aps.61.237804
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy
Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi
Tsinghua National Laboratory for Information Science and Technology Deptment of Electronic Engineering, Tsinghua University, Beijing 100084, China
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